NTE3085 Optoisolator Photon Coupled Bilateral Analog FET Description: The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion–free control of low AC and DC analog signals. Features: As A Remote Variable Resistor D ≤ 100Ω to ≥ 300MΩ D ≥ 99.9% Linearity D ≤ 15pF Shunt Capacitance D ≥ 100GΩ I/O Isolation Resistance As An Analog Signal Switch D Extremely Low Offset Voltage D 60VP–P Signal Capability D No Charge Injection or Latchup D ton, toff ≤ 15µs Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Infrared Emitting Diode Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (Pulse Width 100µs, 100pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak (Pulse Width 1µs, 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Photo Detector Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C Breakdow Voltage, V(BR)46 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Continouos Detector Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±100mA Total Device Surge Isolation Voltage (Input to Output), VISO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500V RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1770V Steady–State Isolation Voltage (Input to Output), VISO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1060V Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 10sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Infrared Emitting Diode Forward Voltage VF IF = 16mA – 1.1 1.75 V Reverse Current IR VR = 6V – – 10 µA V = 0, f = 1MHz – 50 – pF 30 – – V V46 = 15V, IF = 0 – – 50 nA V46 = 15V, IF = 0, TA = +100°C – – 50 µA 300 – – MΩ Capacitance Photo–Detector (Either Polarity) Breakdown Voltage V(BR)46 I46 = 10µA, IF = 0 Off–State Dark Current I46 Off–State Resistance r46 V46 = 15V, IF = 0 Capacitance C46 V46 = 0, IF = 0, f = 1MHz – – 15 pF r46 IF = 16mA, I46 = 100µA – – 200 Ω IF = 16mA, I64 = 100µA – – 200 Ω 100 – – GΩ V10 = 0, f = 1MHz – – 2.5 pF IF = 16mA, RL = 50Ω, V46 = 5V – – 15 µs – – 15 µs – – 0.1 % Coupled Electrical Characteristics On–State Resistance Isolation Resistance (Input to Output) VISO Input to Output Capacitance Turn–On Time ton Turn–Off Time toff Resistance, Non–Linearity and Asymmetry 6 1 5 2 V10 = 500V IF = 16mA, i46 = 25µARMS, f = 1kHz 4 3 .260 (6.6) Max Anode 1 6 Drain Cathode 2 5 N.C. N.C. 3 4 Source .070 (1.78) Max .350 (8.89) Max .200 (5.08) Max .085 (2.16) Max .300 (7.62) .350 (8.89) Max .100 (2.54)