NTE2410 Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411) Description: The NTE2410 is a silicon NPN transistor in an SOT–23 type surface mount case designed for use in high voltage applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Power Dissipation (TA = +25°C, FR–5 Board, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . 225mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556°C/mW Total Power Dissipation (TA = +25°C, Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . . . . 300mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 417°C/mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm). Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 3 160 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 180 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 6 – – V VCB = 120V, IE = 0 – – 50 nA VCB = 120V, IE = 0, TA = +100°C – – 50 µA VEB = 4V, IC = 0 – – 50 nA Collector Cutoff Current Emitter Cutoff Current ICBO IEBO Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 1mA, VCE = 5V 80 – – IC = 10mA, VCE = 5V 80 – 250 IC = 50mA, VCE = 5V 30 – – IC = 10mA, IB = 1mA – – 0.15 V IC = 50mA, IB = 5mA – – 0.20 V IC = 10mA, IB = 1mA – – 1.0 V IC = 50mA, IB = 5mA – – 1.0 V ON Characteristics (Note 3) DC Current Gain hFE Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%. .016 (0.48) C B .098 (2.5) Max E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)