NTE243 (NPN) & NTE244 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 4A = 3V Max @ IC = 8A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.571W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.78°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 80 – – V OFF Characteristics Collector–Emitter SustainingVoltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 100mA, IB = 0, Note 1 ICEO VCE = 40V, IE = 0 – – 0.5 mA ICEX VCE = 80V, VBE(off) = 1.5V – – 0.5 mA VCE = 80V, VBE(off) = 1.5V, TA = +150°C – – 5.0 mA VBE = 5V, IC = 0 – – 2.0 mA IEBO Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2% Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 3V, IC = 4A 750 – 18000 VCE = 3V, IC = 8A 100 – – IC = 4A, IB = 16mA – – 2.0 V IC = 8A, IB = 80mA – – 3.0 V ON Characteristics (Note 1) DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter Saturation Voltage VBE(sat) IC = 8A, IB = 80mA – – 4.0 V Base–Emitter ON Voltage VBE(on) VCE = 3V, IC = 4A – – 2.8 V Dynamic Characteristics Small–Signal Current Gain hfe VCE = 3V, IC = 3A, f = 1kHz 300 – – Magnitude of Common Emitter Small–Signal Short–Circuit Forward Current Transfer Ratio |hfe| VCE = 3V, IC = 3A, f = 1MHz 4.0 – – Output Capacitance NTE243 Cob – – 200 – – 300 MHz pF VCB = 10V, IE = 0, f = 0.1MHz NTE244 pF Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2% NTE243 .135 (3.45) Max C .875 (22.2) Dia Max .350 (8.89) B Seating Plane E .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter NTE244 .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) C .430 (10.92) B .188 (4.8) R Max E Base .525 (13.35) R Max Collector/Case