2666

NTE2666 (NPN) & NTE2667 (PNP)
Silicon Complementary Transistors
High Frequency Driver
Features:
D DC Current Gain Specified to 5 Amperes
D Collector-Emitter Sustaining Voltage
D High Current Gain - Bandwidth Product
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W/°C
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .016W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage VCEO(sus) IC = 10mA, IB = 0, Note 1
250
-
-
V
Collector Cutoff Current
ICBO
VCB = 250V, IE = 0
-
-
10
μA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
-
-
10
μA
hFE
IC = 0.5A, VCE = 5V
70
-
-
-
IC = 1A, VCE = 5V
50
-
-
-
IC = 2A, VCE = 5V
10
-
-
-
ON Characteristics (Note 1)
DC Current Gain
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 1A, IB = 0.1A
-
-
0.5
V
Base-Emitter On Voltage
VBE(on)
IC = 1A, VCE = 5V
-
-
1.0
V
IC = 500mA, VCE = 10V,
ftest = 1MHz
30
-
-
MHz
Dynamic Characteristics: (fT = |hfe|S ftest)
Current Gain-Bandwidth Product
fT
Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
.420 (10.67)
Max
.110 (2.79)
Tab
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.100 (2.54)
Base
.070 (1.78) Max
Emitter
Collector/Tab