NTE466 Silicon N−Channel JFET Transistor Chopper, High Speed Switch TO218 Type package Absolute Maximum Ratings: Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Reverse Gate−Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40V Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/5C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1755C Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit −40 − − V VGS = −20V, VDS = 0 − − 0.25 nA VGS = −20V, VDS = 0, TA = +1505C − − 0.5 5A VDS = 15V, ID = 0.5nA −4 − −10 V VDS = 15V, VGS = −10V − − 0.25 nA VDS = 15V, VGS = −10V, TA = +1505C − − 0.5 5A VDS = 15V, VGS = 0, Note 1 50 − − mA VDS(on) ID = 20mA, VGS = 0 − − 0.75 V rDS(on) VGS = 0, ID = 0, f = 1kHz − − 25 3 OFF Characteristics Gate−Source Breakdown Voltage Gate Reverse Current Gate−Source Cutoff Voltage Drain Cutoff Current V(BR)GSS IG = 1A, VDS = 0 IGSS VGS(off) ID(off) ON Characteristics Zero−Gate−Voltage Drain Current Drain−Source ON−Voltage IDSS Small−Signal Characteristics Drain−Source “ON” Resistance Input Capacitance Ciss VDS = 0, VGS = −10V, f = 1MHz − − 18 pF Reverse Transfer Capacitance Crss VDS = 0, VGS = −10V, f = 1MHz − − 0.8 pF td(on) VDD = 10V, ID(on) = 20mA, VGS(on) = 0, VGS(off) = −10V − − 6 ns − − 3 ns − − 25 ns Switching Characteristics (Note 2) Turn−On Delay Time Rise Time tr Turn−Off Time toff Note 1. Pulse Test: Pulse Width = 100ms, Duty Cycle 3 10%. Note 2. The ID(on) values are nominal; exact values vary slightly with transistor parameters. Rev. 10−13 D G S .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .030 (.762) Max .500 (12.7) Min .018 (0.45) Drain Source Gate 455 .041 (1.05)