NTE NTE456

NTE456
N–Channel Silicon JFET
General Purpose Amp, Switch
Description:
The NTE456 is an N–Channel junction silicon field–effect transistor in a TO72 type package designed
for general purpose amplifier and switching applications.
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain–Gate Voltge, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–30
–
–
V
VGS= –15V, VDS = 0
–
–
–0.1
nA
VGS= –15V, VDS = 0, TA = +150°C
–
–
–100
nA
VGS(off)
VDS = 15V, ID = 0.1nA
–
–
–6
V
VGS
VDS = 15V, ID = 200µA
–1.0
–
–5.0
V
Zero–Gate–Voltage Drain Current
IDSS
VDS = 15V, VGS = 0
2.0
–
6.0
mA
Static Drain–Source On Resistance
rDS(on)
–
400
–
Ω
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
V(BR)GSS VDS = 0, IG = –10µA
IGSS
ON Characteristics
VDS = 0, VGS = 0
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
2000
–
5000
µmhos
Small–Signal Characteristics
Forward Transfer Admittance
Common Source
|yfs|
VDS = 15V, VGS = 0, f = 1kHz, Note 1
Output Admittance Common Source
|yos|
VDS = 15V, VGS = 0, f = 1kHz
–
–
20
µmhos
Input Capacitance
Ciss
VDS = 15V, VGS = 0, f = 1kHz
–
4.5
6.0
pF
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0, f = 1kHz
–
1.2
2.0
pF
Common–Source Output
Capacitance
Cosp
VDS = 15V, VGS = 0, f = 30MHz
–
1.5
–
pF
VDS = 15V, VGS = 0, RS = 1MΩ, f =
100Hz
–
–
2.5
dB
Functional Characteristics
Noise Figure
NF
Note 1. Pulse test: Pulse Width = 630ms, Duty Cycle = 10%.
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
.018 (0.45) Dia
Source
Drain
Gate
45°
Case
.040 (1.02)