PN4393 Silicon N−Channel JFET Transistor Chopper, High Speed

PN4393
Silicon N−Channel JFET Transistor
Chopper, High Speed Switch
TO92 Type Package
Applications:
D Low Level Analog Switches
D Chopper Stabilized Amplifiers
D Sample and Hold Circuits
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30V
Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 357C/W
Note 1. These ratings are limiting values above which the serviceability of any semiconductor device
may be impaired and are based on a maximum junction temperature of +150C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−30
−
−
V
VGS = −15V, VDS = 0
−
−
−1.0
nA
VGS = −15V, VDS = 0, TA = +150C
−
−
−0.2
A
−0.5
−
−3.0
V
OFF Characteristics
Gate−Source Breakdown Voltage
Gate Reverse Current
Gate−Source Cutoff Voltage
V(BR)GSS IG = 1A, VDS = 0
IGSS
VGS(off)
VDS = 20V, ID = 1nA
Gate−Source Forward Voltage
VGS(f)
VDS = 0, IG = 1mA
−
−
1.0
V
Drain Cutoff Leakage Current
ID(off)
VDS = 20V, VGS = −5V
−
−
0.1
nA
VDS = 20V, VGS = −5V, TA = +150C
−
−
0.2
A
VDS = 20V, VGS = 0, Note 2
5
−
30
mA
ON Characteristics
Zero−Gate Voltage Drain Current
IDSS
Drain−Source ON Voltage
VDS(on) ID = 3mA, VGS = 0
−
−
0.4
V
Drain−Source ON Resistance
rDS(on)
−
−
100

ID = 1mA, VGS = 0
Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  1%.
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VDS = VGS = 0, f = 1kHz
−
−
100

Small−Signal Characteristics
Drain−Source ON Resistance
rds(on)
Input Capacitance
Ciss
VDS = 20V, VGS = 0, f = 1MHz
−
−
14
pF
Reverse Transfer Capacitance
Crss
VGS = 5V, f = 1MHz
−
−
3.5
pF
Switching Characteristics
Rise Time
tr
ID(on) = 3mA
−
−
5
ns
Fall Time
tf
VGS(off) = 3V
−
−
30
ns
Turn−On Time
ton
ID(on) = 3mA
−
−
15
ns
Turn−Off Time
toff
VGS(off) = 3V
−
−
50
ns
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
D S G
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max