NTE457 Silicon N−Channel JFET Transistor General Purpose Amp, Switch TO92 Type Package Absolute Maximum Ratings: Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Reverse Gate−Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/5C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1255C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1505C Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IG = −103A, VDS = 0 −25 − − V VGS = 15V, VDS = 0 − − −1 mA VGS = 15V, VDS = 0, TA = +1005C − − −200 mA OFF Characteristics Gate−Source Breakdown Voltage V(BR)GS S Gate Reverse Current Gate−Source Cutoff Voltage IGSS VGS(off) VDS = 15V, ID = 10nA −0.5 − −6.0 V VGS VDS = 15V, ID = 1003A − − −2.5 V IDSS VDS = 15V, VGS = 0, Note 1 1 3 5 mA Forward Transfer Admittance Common Source |yfs| VDS = 15V, VGS = 0, f = 1kHz, Note 1 1000 − Output Admittance Common Source |yos| VDS = 15V, VGS = 0, f = 1kHz, Note 1 − 10 50 3mhos Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1kHz − 4.5 7.0 pF Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1kHz − 1.5 3.0 pF Gate−Source Voltage ON Characteristics Zero−Gate Voltage Drain Current Small−Signal Characteristics 5000 3mhos Note 1. Pulse Test: Pulse Width 3 630ms, Duty Cycle 3 10%. Rev. 10−13 D G S .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min D S G .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max