457

NTE457
Silicon N−Channel JFET Transistor
General Purpose Amp, Switch
TO92 Type Package
Absolute Maximum Ratings:
Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Reverse Gate−Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/5C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1255C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1505C
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IG = −103A, VDS = 0
−25
−
−
V
VGS = 15V, VDS = 0
−
−
−1
mA
VGS = 15V, VDS = 0, TA = +1005C
−
−
−200
mA
OFF Characteristics
Gate−Source Breakdown Voltage
V(BR)GS
S
Gate Reverse Current
Gate−Source Cutoff Voltage
IGSS
VGS(off)
VDS = 15V, ID = 10nA
−0.5
−
−6.0
V
VGS
VDS = 15V, ID = 1003A
−
−
−2.5
V
IDSS
VDS = 15V, VGS = 0, Note 1
1
3
5
mA
Forward Transfer Admittance
Common Source
|yfs|
VDS = 15V, VGS = 0, f = 1kHz,
Note 1
1000
−
Output Admittance Common Source
|yos|
VDS = 15V, VGS = 0, f = 1kHz,
Note 1
−
10
50
3mhos
Input Capacitance
Ciss
VDS = 15V, VGS = 0, f = 1kHz
−
4.5
7.0
pF
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0, f = 1kHz
−
1.5
3.0
pF
Gate−Source Voltage
ON Characteristics
Zero−Gate Voltage Drain Current
Small−Signal Characteristics
5000 3mhos
Note 1. Pulse Test: Pulse Width 3 630ms, Duty Cycle 3 10%.
Rev. 10−13
D
G
S
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
D S G
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max