460

NTE460
Silicon P−Channel JFET Transistor
AF Amp
TO72 Type Package
Absolute Maximum Ratings:
Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Reverse Gate−Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3W
Derate above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/5C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +2005C
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
20
−
−
V
VGS = 10V, VDS = 0
−
−
10
nA
VGS = 10V, VDS = 0, TA = +1505C
−
−
10
5A
2.0
−
6.0
mA
OFF Characteristics
Gate−Source Breakdown Voltage
Gate Reverse Current
V(BR)GSS IG = 105 A, VDS = 0
IGSS
ON Characteristics
Zero−Gate−Voltage Drain Current
IDSS
VDS = −10V, VGS = 0, Note 1
Gate−Source Voltage
VGS
VDG = −15V, ID = 105 A
−
−
6.0
V
Drain−Source Resistance
rDS
ID = 1005 A, VGS = 0
−
−
800
3
|yfs|
VDS = 10V, ID = 2mA, f = 1kHz, Note 1
1500
−
3000 5 mhos
VDS = 10V, ID = 2mA, f = 10MHz, Note 1
1350
−
−
5 mhos
Small−Signal Characteristics
Forward Transfer Admittance
Output Admittance
|yos|
VDS = 10V, ID = 2mA, f = 1kHz
−
−
40
5 mhos
Reverse Transfer Conductance
|yrs|
VDS = 10V, ID = 2mA, f = 1kHz
−
−
0.1
5 mhos
Input Conductance
|yis|
VDS = 10V, ID = 2mA, f = 1kHz
−
−
0.2
5 mhos
Inpu Capacitance
Ciss
VDS = 10V, VGS = 1V, f = 1MHz
−
−
20
pF
NF
VDS = −5V, ID = 1mA, Rg = 1M3 , f = 1kHz
−
−
3.0
dB
Functional Characteristics
Noise Figure
Note 1. Pulse Test: PulseWidth 3 630ms, Duty Cycle 3 10%.
Rev. 10−13
D
G
S
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
.018 (0.45) Dia
Gate
Source
Drain
455
Case
.040 (1.02)