NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +110°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5°C/W Elwectrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1A, IB = 0, Note 1 60 – – V V(BR)CES IC = 300mA, VBE = 0, Note 1 75 – – V Floating Potential VEBF VCB = 75V, IE = 0 – – 1.0 V Collector Cutoff Current ICBO VCB = 2V, IE = 0 – 0.8 0.2 mA VCB = 74V, IE = 0 – 0.9 4.0 mA VCB = 75V, IE = 0, TC = +71°C – 4.0 15 mA VBE = 25V, IC = 0 – 0.2 4.0 mA VBE = 30V, IC = 0 – 0.2 4.0 mA VBE = 40V, IC = 0 – 0.2 4.0 mA VBE = 40V, IC = 0, TC = +71°C – 2.7 15 mA Emitter Cutoff Current IEBO Note 1. To avoid excessive heating of the collector junction, perform these tests with an oscilloscope. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCB = 2V, IC = 5A 50 75 100 VCB = 2V, IC = 15A 25 47 – VCB = 2V, IC = 25A 15 38 – IC = 5A, IB = 500mA – 0.06 0.1 V IC = 25A, IB = 2A – 0.2 0.3 V IC = 5A, IB = 500mA – 0.65 1.0 V IC = 25A, IB = 2A – 1.0 2.0 V VCE = 6V, IC = 5A 2.0 2.7 – kHz ON Characteristics DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter ON Voltage VBE(on) Dynamic Characteristics Common–Emitter Cutoff Frequency fαe 1.250 (31.75 Dia Max 1.005 (25.55) Dia Max .500 (12.7) Max .520 (13.2) Max .710 (18.03) Max .312 (7.93) 10–32 UNF–2A .190 (4.83) Emitter Base .345 (8.76) Collector/Case