NTE5368

NTE5368
Silicon Controlled Rectifier (SCR)
for High Speed Switching,
135 Amp, TO83
Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified)
Repetitive Peak Voltages, VDRM, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Non−Repetitive Peak Reverse Blocking Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Average On−State Current (180° Conduction, Half Sine Wave, TC = +85°C), IT(AV) . . . . . . . . . . 85A
RMS On−State Current (DC, TC = +77°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135A
Continuous On−State Current, IT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175A
Peak One Half Cycle, Non−Repetitive Surge Current, ITSM
(No Voltage Reapplied, Sinusoidal Half Wave)
t = 10ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2450A
t = 8.3ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2560A
(100% VRRM Reapplied, Sinusoidal Half Wave)
t = 10ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2060A
t = 8.3ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2160A
Maximum I2t for Fusing, I2t
(No Voltage Reapplied, Sinusoidal Half Wave)
t = 10ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30KA2s
t = 8.3ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27KA2s
(100% VRRM Reapplied, Sinusoidal Half Wave), I2t
t = 10ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21KA2s
t = 8.3ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19KA2s
Maximum I2√t for Fusing (t = 0.1 to 10ms, No Voltage Reapplied), I2√t . . . . . . . . . . . . . . 300KA2√s
Max. Peak Positive Gate Current (tp ≤ 5ms), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Max. Peak Positive Gate Voltage (tp ≤ 5ms), +VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Max. Peak Negative Gate Voltage (tp ≤ 5ms), −VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Average Gate Power (f = 50Hz, d% = 50), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Max. Peak Gate Power (f = 50Hz, d% = 50), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Max. Critical Rate of Rise of Off−State Voltage (To 80% VDRM), dv/dt . . . . . . . . . . . . . . . . . 500V/μs
Max. Non−Repetitive Rate of Rise of Turned On Current, di/dt
(VDRM = 600V, ITM = 2 x di/dt) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/μs
Operating Temperature Range, Ths . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Thermal Resistance, Junction−to−Case, RthJC
(DC Operation) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.195K/W
Thermal Resistance, Case−to−Heatsink, RthCS
(Mounting surface, smooth, flat and greased) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.08K/W
Rev. 10−11
Absolute Maximum Ratings (Cont’d): (TJ = +125°C unless otherwise specified)
Max. Peak On−State Voltage (ITM = 300A, tp = 10ms Sine Wave Pulse), VTM . . . . . . . . . . . . 2.15V
Low Level Threshold Voltage ([16.7% x π x IT(AV) < I < π x IT(AV)]), VT(TO)1 . . . . . . . . . . . . . . . 1.46V
High Level Threshold Voltage ([I > π x IT(AV)]), VT(TO)2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52V
Low level Forward Slope Resistance ([16.7% x π x IT(AV) < I < π x IT(AV)]), rt1 . . . . . . . . . . . 2.32mΩ
High level Forward Slope Resistance ([I > π x IT(AV)]), rt2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.34mΩ
Repetitive Peak Off−State Current (Rated VDRM Applied), IDRM . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Repetitive Peak Reverse Current (Rated VRRM Applied), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Max. Gate Current (VA = 12V, Ra = 6Ω, TJ = +25°C), IGT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Max. Gate Voltage (VA = 12V, Ra = 6Ω, TJ = +25°C), VGT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Max. Holding Current (IT > 30A, TJ = +25°C), IH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Typical Latching Current (TJ = +25°C, VA = 12V, Ra = 6Ω, IG = 1A), IL . . . . . . . . . . . . . . . . . 1000mA
Max. DC Gate Current Not to Trigger (Rated VDRM Applied), IGD . . . . . . . . . . . . . . . . . . . . . . . 20mA
Max. DC Gate Voltage Not to Trigger (Rated VDRM Applied), VGD . . . . . . . . . . . . . . . . . . . . . . . 0.25V
Typical Delay Time, td
(TJ = +25°C, VDM = 600V, ITM = 50A DC, tp = 1μs, Resistive Load,
Gate Pulse: 10V, 5Ω Source) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.80μs
Max. Turn−Off Time (ITM = 100A, Commutating di/dt = 10A/μs, VR = 50V, tp = 200μs), tq . . . 10−20μs
1.063 (27.0)
(Across Flats)
.650 (16.5) Max
Cathode
.205 (5.2) Dia Max
Gate
.394 (10.0)
1.929
(49.0)
Max
.886 (22.5) Dia Max
.492 (12.5) Max
.827
(21.0)
Max
Anode
1/2−20 UNF−2A
(Terminal 3)