NTE5586

NTE5586
Silicon Controlled Rectifier (SCR)
600V, 360 Amps, TO93
Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified)
Repetitive Peak Voltages, VDRM & VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Non−Repetitive Peak Reverse Blocking Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Average On−State Current (180° Conduction, Half Sine Wave, TC = +85°C), IT(AV) . . . . . . . . . 230A
RMS On−State Current (TC = +78°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A
Peak Gate Power (tp ≤ 5ms), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Average Gate Power (f = 50Hz, d% = 50), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Peak Positive Gate Current (tp ≤ 5ms), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak Gate Voltage (tp ≤ 5ms), VGM
Positive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Negative . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Critical Rate of Rise of Off−State Voltage (To 80% VDRM), dv/dt . . . . . . . . . . . . . . . . . . . . . . 500V/μs
Repetitive Peak Off−State Current (At VDRM), IDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Repetitive Peak Reverse Current (At VRRM), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
On−State Voltage (Ipk = 720A, tp = 10ms Sine Pulse), VTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.55V
Holding Current (TJ = +25°C, Anode Supply 12V Resistive Load), IH . . . . . . . . . . . . . . . . . . . 600mA
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Thermal Resistance, Junction−to−Case (DC Operation), RtnJC . . . . . . . . . . . . . . . . . . . . . . 0.10°C/W
Thermal Resistance, Case−to−Heat Sink, RthCS
Mounting Surface Smooth, Flat and Greased . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04°C/W
Electrical Characteristics: (TJ = +125°C unless otherwise specified)
Parameter
Peak, One−Cycle,
Non−Repetitive Surge
Current
Symbol
ITSM
Test Conditions
Min
Typ
Max
Unit
−
−
5700
A
−
−
5970
A
−
−
4800
A
−
−
5000
A
−
−
163
KA2s
−
−
148
KA2s
−
−
115
KA2s
−
−
105
KA2s
t = 0.1 to 10ms, No Voltage Reapplied
−
−
1630 KA2√s
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I2t
for Fusing
I2t
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I2√t for Fusing
I2√t
No Voltage
Reapplied
Sinusoidal Half
Wave, Initial
100% VRRM
Applied
No Voltage
Reapplied
Sinusoidal Half
Wave, Initial
100% VRRM
Applied
Threshold Voltage, Low Level
VT(TO)1
(16.7% x π x IT(AV) < I < π x IT(AV))
−
0.92
−
V
Threshold Voltage, High Level
VT(TO)2
(I > π x IT(AV))
−
0.98
−
V
On−State Slope Resistance,
Low Level
rt1
(16.7% x π x IT(AV) < I < π x IT(AV))
−
0.88
−
mΩ
On−State Slope Resistance,
High Level
rt2
(I > π x IT(AV))
−
0.81
−
mΩ
Electrical Characteristics (Cont’d): (TJ = +125°C unless otherwise specified)
Parameter
Symbol
Latching Current
IL
Non−Repetitive Rate of Rise
of Turned−On Current
di/dt
Test Conditions
Min
Typ
Max
Unit
TJ = +25°C, Anode Supply 12V Resistive Load
−
300
1000
mA
Gate Drive 20V, 20Ω, tr ≤ 1μs,
Anode Voltage ≤ 80% VDRM
−
−
1000
A/μs
Delay Time
td
Gate Current 1A, dig/dt = 1A/μs,
Vd = 0.67% VDRM
−
1.0
−
μs
Turn−Off Time
tq
ITM = 300A, di/dt = 20A/μs, VR = 50V,
dv/dt = 20V/μs, Gate 0V 100Ω tp = 500μs
−
100
−
μs
TJ = −40°C
−
180
−
mA
−
90
150
mA
−
40
−
mA
TJ = −40°C
−
2.9
−
V
TJ = +25°C
−
1.8
3.0
V
TJ = +125°C
−
1.2
−
V
Maximum gate current/voltage not to trigger is
the maximum value which will not trigger the
unit with rated VDRM anode−to−cathode applied.
−
10
−
mA
−
0.25
−
V
IGT
DC Gate Current Required
to Trigger
TJ = +25°C
TJ = +125°C
VGT
DC Gate Voltage Required
to Trigger
DC Gate Current not to Trigger
IGD
DC Gate Voltage not to Trigger
VGD
Maximum required gate trigger
current/voltage is the lowest
value which will trigger the unit,
12V anode−to−cathode applied.
1.443 (36.68) Max
(Across Corners)
ÇÇ
ÇÇ
1.031 (26.18) Dia
(Ceramic)
.643 (16.35)
For No. 6 Screw
For No. 6 Screw
Cathode
.350 (8.89)
Dia Max
Gate
(White)
Cathode
(Red)
8.100
(205.74)
Max
(Terminals
1, 2, & 3)
3.625
(92.07)
Max
1.212 (30.8)
Dia Max
.156 (3.96) Max
.630 (16.0)
3/4−16 UNF−2A
(Terminal 4)
Anode
1.077 (27.35) Max