NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch (Compl to NTE2906) TO3 Type Package D Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G S Absolute Maximum Ratings: (TC = +25 C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . m14V Continuous Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Body Drain Diode, ID(PK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Power Dissipation (TC = +25 C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150 C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150 C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 C/W Electrical Characteristics: (TC = +25 C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Drain−Source Breakdown Voltage BVDSX VGS = 10V, ID = 10mA 200 − − V Gate−Source Breakdown Voltage BVGSS VDS = 0, IG = m100mA m14 − − V Gate−Source Cut−Off Voltage VGS(OFF) VDS = 10V, ID = 100mA 0.15 − 1.5 V Drain−Source Saturation Voltage VDS(SAT) VGD = 0, ID = 8A, Note 1 − − 12 V − − 10 mA 0.7 − 2.0 S Drain−Source Cut−Off Current IDSX Forward Transfer Admittance yfs VGS = 10V, VDS = 200V VDS = 10V, ID = 3A, Note 1 Note 1. Pulse Test: Pulse Width = 300ms, Duty Cycle 2%. Rev. 10−13 Electrical Characteristics (Cont’d): (TC = +25 C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − 734 − pF Dynamic Characteristics Input Capacitance Ciss VDS = 10V, f = 1MHz Output Capacitance Coss − 300 − pF Reverse Transfer Capacitance Crss − 26 − pF Turn−On Time ton − 120 − ns Turn−Off Time toff − 60 − ns VDS = 20V, ID = 5A .135 (3.45) Max .875 (22.2) Dia Max .350 (8.89) Seating Plane .312 (7.93) Min Drain .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Gate .525 (13.35) R Max Source/Case