2919

NTE2919
MOSFET
P−Ch, Enhancement Mode
High Speed Switch
TO−220 Full Pack Type Package
Features:
D Low ON−Resistance
D Ultra High−Speed Switching
D 4V Drive
D
G
S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Drain−to−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −60V
Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −20A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −80A
Allowable Power Dissipation (TC = +25C), PD
TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Note 1. Pulse Width  10s, Duty Cycle  1%.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Drain−to−Source Breakdown Voltage
V(BR)DSS
Test Conditions
VGS = 0V, ID = −1A
Min
Typ
Max
Unit
−60
−
−
V
Zero−Gate Voltage Drain Current
IDSS
VDS = −60V, VGS = 0V
−
−
−1
A
Gate−to−Source Leakage Current
IGSS
VGS = 16V, VDS = 0
−
−
10
A
Cutoff Voltage
Forward Transfer Admittance
Static Drain−to−Source On−Resistance
VGS(off)
VDS = −10V, ID = −1mA
−1.2
−
−2.6
V
|yfs|
VDS = −10V, ID = −10A
11
17
−
S
RDS(on)
VGS = −10V, ID = −10A
−
45
60
m
VGS = −4V, ID = −10A
−
65
92
m
VDS = −20V, f = 1MHz
−
2200
−
pF
Input Capacitance
Ciss
Output Capacitance
Coss
−
220
−
pF
Reverse Transfer Capacitance
Crss
−
165
−
pF
Rev. 9−14
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Turn−On Delay Time
Min
Typ
Max
Unit
−
18
−
ns
−
115
−
ns
td(off)
−
190
−
ns
tf
−
120
−
ns
−
−
45
nC
td(on)
Rise Time
tr
Turn−Off Delay Time
Fall Time
Test Conditions
VDD = −30V, ID = −10A, RL = 3,
Note 1
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
−
−
7.4
nC
Gate−to−Drain (“Miller”) Charge
Qgd
−
−
9
nC
Diode Forward Voltage
VSD
−
−0.95
−1.2
V
ID = −20A, VDS = −30V, VGS = −10V
IS = −20A, VGS = 0
Note 1. Pulse Width  10s, Duty Cycle  1%.
.177 (4.5)
.394 (10.0)
.110 (2.8)
.138
(3.5)
.283
(7.2)
.630
(16.0)
G
D
S
.220
(5.6)
.551
(14.0)
Min
.100 (2.54)
.094 (2.4)