NTE2919 MOSFET P−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Features: D Low ON−Resistance D Ultra High−Speed Switching D 4V Drive D G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−to−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −60V Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −20A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −80A Allowable Power Dissipation (TC = +25C), PD TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Note 1. Pulse Width 10s, Duty Cycle 1%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Drain−to−Source Breakdown Voltage V(BR)DSS Test Conditions VGS = 0V, ID = −1A Min Typ Max Unit −60 − − V Zero−Gate Voltage Drain Current IDSS VDS = −60V, VGS = 0V − − −1 A Gate−to−Source Leakage Current IGSS VGS = 16V, VDS = 0 − − 10 A Cutoff Voltage Forward Transfer Admittance Static Drain−to−Source On−Resistance VGS(off) VDS = −10V, ID = −1mA −1.2 − −2.6 V |yfs| VDS = −10V, ID = −10A 11 17 − S RDS(on) VGS = −10V, ID = −10A − 45 60 m VGS = −4V, ID = −10A − 65 92 m VDS = −20V, f = 1MHz − 2200 − pF Input Capacitance Ciss Output Capacitance Coss − 220 − pF Reverse Transfer Capacitance Crss − 165 − pF Rev. 9−14 Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Turn−On Delay Time Min Typ Max Unit − 18 − ns − 115 − ns td(off) − 190 − ns tf − 120 − ns − − 45 nC td(on) Rise Time tr Turn−Off Delay Time Fall Time Test Conditions VDD = −30V, ID = −10A, RL = 3, Note 1 Total Gate Charge Qg Gate−to−Source Charge Qgs − − 7.4 nC Gate−to−Drain (“Miller”) Charge Qgd − − 9 nC Diode Forward Voltage VSD − −0.95 −1.2 V ID = −20A, VDS = −30V, VGS = −10V IS = −20A, VGS = 0 Note 1. Pulse Width 10s, Duty Cycle 1%. .177 (4.5) .394 (10.0) .110 (2.8) .138 (3.5) .283 (7.2) .630 (16.0) G D S .220 (5.6) .551 (14.0) Min .100 (2.54) .094 (2.4)