2920

NTE2920
MOSFET
N−Ch, Enhancement Mode
High Speed Switch
TO3P Type Package
Features:
D Drain Current: ID = 70A at TC = +25C
D Drain Source Voltage: VDSS = 60V Min
D Static Drain−Source On−Resistance: RDS(on) = 0.014 Max
D Fast Switching
D
G
S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Continuous Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Continuous Drain Current, ID
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64A
Single Pulse Drain Current, IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Drain−Source Breakdown Voltage
Symbol
V(BR)DSS
Test Conditions
Min
Typ
Max
Unit
VGS = 0V, ID = 250A
60
−
−
V
2.0
−
4.0
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250A
Drain−Source On−Resistance
RDS(on)
VGS = 10V, ID = 54A
−
−
0.014

Gate−Source Body Leakage Current
IGSS
VGS = 20V, VDS = 0V
−
−
100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60V, VGS = 0V
−
−
25
A
Forward ON−Voltage
VSD
IS = 90A, VGS = 0V
−
−
2.5
V
Forward Transconductance
gfs
VDS = 25V, ID = 54A
25
−
−
S
Rev. 11−15
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
−
−
160
nC
−
−
48
nC
−
−
54
nC
−
20
−
ns
−
160
−
ns
td(off)
−
83
−
ns
tf
−
150
−
ns
Between lead, .250in. (6.0) mm from
package and center of die contact
−
5.0
−
nH
−
13
−
nH
VGS = 0V, VDS = 25V, f = 1MHz
−
4500
−
pF
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
Gate−to−Drain (“Miller”) Charge
Qgd
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
Fall Time
Test Conditions
ID = 64A, VDS = 48V, VGS = 10V,
Note 1
VDD = 30V, ID = 64A, RG = 6.2,
RD = 0.45, Note 1
Internal Drain Inductance
LD
Internal Source Inductance
LS
Input Capacitance
Ciss
Output Capacitance
Coss
−
2000
−
pF
Reverse Transfer Capacitance
Crss
−
300
−
pF
Min
Typ
Max
Unit
Source−Drain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Continuous Source Current (Body Diode)
IS
Note 2
−
−
70
A
Pulsed Source Current (Body Diode)
ISM
Note 1
−
−
360
A
Diode Forward Voltage
VSD
TJ = +25C, IS = 90A, VGS = 0V,
Note 3
−
−
2.5
V
Reverse Recovery Time
trr
−
270
540
ns
Reverse Recovery Charge
Qrr
TJ = +25C, IF = 64A,
di/dt = 100A/s, Note 1
−
1.1
2.2
C
Forward Turn−On Time
ton
Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD)
Note 1. Pulse width  300s; duty cycle  2%.
Note 2. Current limited by the package, (Die Current = 90A).
Note 3. Repetitive rating; pulse width limited by maximum junction temperature.
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
G
D
S
.215 (5.47)