NTE NTE491

NTE491
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain–Gate Voltage (RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, Rth (JA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312.5°C/W
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . +300°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VDS = 48V, VGS = 0
–
–
1.0
µA
VDS = 48V, VGS = 0, TJ = +125°C
–
–
1.0
mA
VGS = 0, ID = 10µA
60
–
–
V
IGSSF
VGSF = 15V, VDS = 0
–
–
–10
nA
Gate Threshold Voltage
VGS(Th)
ID = 1mA, VDS = VGS
0.8
–
3.0
V
Static Drain–Source ON Resistance
rDS(on)
VGS = 10V, ID = 500mA
–
–
5.0
Ω
VGS = 4.5V, ID = 75mA
–
–
6.0
Ω
VGS = 10V, ID = 500mA
–
–
2.5
V
VGS = 4.5V, ID = 75mA
–
–
0.45
V
Id(on)
VGS = 4.5V, VDS = 10V
75
–
–
mA
gfs
VDS = 10V, ID = 200mA
100
–
–
µmhos
OFF Characteristics
Zero–Gate–Voltage Drain Current
Drain–Source Breakdown Voltage
Gate–Body Leakage Current, Forward
IDSS
V(BR)DSS
ON Characteristics (Note 1)
Drain–Source ON–Voltage
ON–State Drain Current
Forward Transconductance
VDS(on)
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
–
60
pF
Dynamic Characteristics
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
–
–
25
pF
Output Capacitance
Coss
–
–
5.0
pF
–
–
10
ns
–
–
10
ns
VDS = 25V, VGS = 0, f = 1MHz
Switching Characteristics
Turn–On Delay Time
ton
Turn–Off Delay Time
toff
VDD = 15V, ID = 500mA,
Rgen = 25Ω,
Ω RL = 25Ω
Ω
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (0.45) Dia Max
S G D
.100 (2.54)
.050 (1.27)
.156
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max