VS-FC80NA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module High Side Chopper - Power MOSFET, 100 A FEATURES 3 (D) MOSFET • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness 2 (G) 1 (S, K) • Fully characterized capacitance and avalanche SOA • Fully isolated package • Easy to use and parallel 4 (A) SOT-227 • Low on-resistance • Simple drive requirements PRODUCT SUMMARY CHOPPER DIODE MOSFET VDSS 200 V RDS(on) 0.0096 ID at 97 °C 80 A Type Modules - MOSFET Package • Low forward voltage drop • Ultrafast, soft reverse recovery, with high operating junction temperature (TJ max. = 175 °C) • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SOT-227 CHOPPER DIODE IF at 90 °C 64 ns trr 33 ns MAJOR RATINGS AND CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 200 V MOSFET Drain to source voltage Continuous drain current VGS at 10 V Pulsed drain current Power dissipation Gate to source voltage Single pulse avalanche energy VDSS ID (1) TC = 25 °C TC = 90 °C IDM (2) PD 108 83 A 170 TC = 25 °C 405 TC = 90 °C 229 W VGS ± 30 V EAS (3) 600 mJ Avalanche current IAR (4) 50 A Repetitive avalanche energy EAR (4) 300 mJ 200 V CHOPPER DIODE Cathode to anode voltage Continuous forward current Maximum peak one cycle non-repetitive surge current Maximum power dissipation, chopper diode VR IF TC = 25 °C 92 TC = 90 °C 64 IFSM PD Tc = 90 °C A 280 A 79 W Notes (1) Maximum continuous drain current at V GS 10 V must be limited to 100 A to do not exceed the maximum temperature of power terminals. (2) Repetitive rating; pulse width limited by maximum junction temperature starting T = 25 °C J (3) Limited by T max., starting T = 25 °C, L = 0.23 mH, R = 25 , I J J g AS = 72 A, VGS = 10 V. Part not recommended for use above this value. (4) Repetitive rating; pulse width limited by maximum junction temperature starting T = 25 °C, L = 0.23 mH, R = 25 , V J g GS = 10 V, duty cycle 1 % Revision: 13-Jun-16 Document Number: 94856 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC80NA20 www.vishay.com Vishay Semiconductors MAJOR RATINGS AND CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS MODULE Operating junction temperature range TJ -55 to +175 Storage temperature range TStg -55 to +175 RMS insulation voltage VISO any terminal to case, t = 1 min °C 2500 V THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case thermal resistance Case to sink, flat greased surface (heatsink compound thermal conductivity = 1 W/mK) SYMBOL MOSFET Chopper Diode Module MIN. TYP. MAX. - - 0.37 - - 1.08 - 0.10 - Torque to terminal - - 1.1 (9.7) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) - 30 RthJC RthCS Mounting torque Approximate module weight UNITS °C/W Nm (lbf.in) - g ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS 200 - - V Reference to 25 °C, ID = 1 mA - 0.21 - V/°C VGS = 10 V, ID = 80 A - 9.6 14.0 m MOSFET Drain-to-source breakdown voltage Breakdown voltage temperature coefficient Static drain-to-source on-resistance Gate threshold voltage Forward transconductance Drain-to-source leakage current Gate-to-source forward leakage Gate-to-source reverse leakage V(BR)DSS V(BR)DSS/TJ RDS(on) (1) VGS(th) gfs IDSS IGSS Total gate charge Qg Gate-to-source charge Qgs VGS = 0 V, ID = 500 μA VDS = VGS, ID = 250 μA 2.7 4.1 5.5 VDS = VGS, ID = 250 μA , TJ = 125 °C - 2.6 - VDS = 20 V, ID = 80 A - 200 - VDS = 200 V, VGS = 0 V - 0.6 25 VDS = 200 V, VGS = 0 V, TJ = 125 °C - 20 500 VDS = 200 V, VGS = 0 V, TJ = 175 °C - 1 5 VGS = 20 V - - 120 VGS = -20 V - - -120 - 161 - - 54 - ID = 80 A, VDS = 100 V, VGS = 10 V, see fig. 15 and fig. 28 (1) Gate-to-drain ("Miller") charge Qgd - 52 Turn-on delay time td(on) - 148 - tr - 215 - - 114 - - 125 - Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time Internal source inductance td(off) tf td(on) - 132 - tr - 215 - - 124 - - 108 - td(off) VDD = 100 V, ID = 80 A, Rg = 2.5 , L = 500 μH, TJ = 125 °C tf LS Ciss Input capacitance VDD = 100 V, ID = 80 A, Rg = 2.5 , L = 500 μH Coss Between lead and center of die contact VGS = 0 V, VDS = 50 V, f = 1.0 MHz, see fig. 14 Crss Drain to Case Capacitance Cd-cs VGS = 0 V, (G-S shorted); f = 1 MHz - 3 - - 10 720 - - 810 - - 160 - - 50 - V S μA mA nA nC ns ns nH pF Revision: 13-Jun-16 Document Number: 94856 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC80NA20 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 30 A - 0.94 1.08 IF = 30 A, TJ = 125 °C - 0.8 - UNITS CHOPPER DIODE Diode reverse breakdown voltage VBR Forward voltage drop VFM Reverse leakage current Junction capacitance IRM CT IR = 100 μA V IF = 30 A, TJ = 175 °C - 0.74 - VR = VR rated - 1 50 VR = VR rated, TJ = 125 °C - 7 - VR = VR rated, TJ = 175 °C - 0.15 1 mA VR = 200 V - 119 - pF UNITS μA Note (1) Pulse width 400 μs, duty cycle 2 % SOURCE-DRAIN RATINGS AND CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. IS MOSFET Continuous source current (body diode) - 108 ISM (1) MOSFET symbol showing the integral reverse p-n junction diode - Pulsed source current (body diode) - - 170 TJ = 25 °C, IS = 80 A, VGS = 0 V - 0.88 1.02 Body diode forward voltage VSD (2) TJ = 125 °C, IS = 80 A, VGS = 0 V - 0.76 - TJ = 175 °C, IS = 80 A, VGS = 0 V - 0.70 - - 145 - ns - 11 - A A V Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr - 790 - nC Reverse recovery time trr - 170 - ns - 13.5 - A - 1140 - nC Reverse recovery current Irr Reverse recovery charge Qrr Forward turn-on time ton TJ = 25 °C, IF = 30 A, dIF/dt = 100 A/μs, VR = 100 V (2) TJ = 125 °C, IF = 30 A, dIF/dt = 100 A/μs, VR = 100 V (2) Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD) DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS CHOPPER DIODE Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Reverse recovery time - 33 - ns - 3.5 - A Qrr - 59 - nC trr - 59 - ns - 8.3 - A - 238 - nC Reverse recovery current Irr Reverse recovery charge Qrr TJ = 25 °C, IF = 30 A, dIF/dt = 200 A/μs, VR = 100 V (2) TJ = 25 °C, IF = 30 A, dIF/dt = 200 A/μs, VR = 100 V (2) Notes Repetitive rating, pulse width limited by maximum junction temperature (see fig. 27) (2) Pulse width 300 μs, duty cycle 2 % (1) Revision: 13-Jun-16 Document Number: 94856 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC80NA20 Vishay Semiconductors 200 200 175 180 VGE = 7 V VGE = 8 V VGE = 9 V VGE = 10 V VGE = 12 V VGE = 15 V 160 150 140 125 120 DC ID (A) Allowable Case Temperature (°C) www.vishay.com 100 100 80 75 60 50 40 25 20 0 0 0 25 50 75 100 125 0 1 2 3 4 5 6 ID - Continuous Drain Current (A) VDS (V) Fig. 1 - Maximum MOSFET Drain-Source Current vs. Case Temperature Fig. 4 - Typical MOSFET Output Characteristics, at TJ = 125 °C 1000 200 VGE = 7 V VGE = 8 V VGE = 9 V VGE = 10 V VGE = 12 V VGE = 15 V 180 160 140 TJ = 25 °C TJ = 125 °C TJ = 175 °C 120 ID (A) ID (A) 100 100 80 10 60 40 20 1 0.01 0 0.1 1 10 0 2 3 4 5 6 7 8 VDS (V) Fig. 2 - Typical MOSFET Output Characteristics, VGS = 10 V Fig. 5 - Typical MOSFET Output Characteristics, at TJ = 175 °C 35 200 160 140 120 RDS(on) - Drain-to-Source On-Resistance (mΩ) VGE = 7 V VGE = 8 V VGE = 9 V VGE = 10 V VGE = 12 V VGE = 15 V 180 ID (A) 1 VDS (V) 100 80 60 40 ID = 80 A VGS = 10 V 30 25 20 15 10 20 5 0 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 175 200 VDS (V) TJ (°C) Fig. 3 - Typical MOSFET Output Characteristics, at TJ = 25 °C Fig. 6 - Typical Drain to Source On-Resistance vs. Temperature Revision: 13-Jun-16 Document Number: 94856 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC80NA20 www.vishay.com Vishay Semiconductors 100 10 VDS = 20 V 90 TJ = 175 °C 1 80 IDSS (mA) 70 ID (A) 60 TJ = 125 °C 50 40 0.1 TJ = 125 °C 0.01 TJ = 25 °C 30 0.001 20 TJ = 25 °C 10 0.0001 0 3 4 5 6 7 8 50 75 100 125 Fig. 7 - Typical MOSFET Transfer Characteristics 200 Fig. 10 - Typical MOSFET Zero Gate Voltage Drain Current 200 4.5 Allowable Case Temperature (°C) 5.0 TJ = 25 °C 4.0 VGEth (V) 175 VDSS (V) VGS (V) 3.5 TJ = 125 °C 3.0 2.5 2.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 175 150 125 DC 100 75 50 25 0 1.0 0 20 40 60 80 100 ID (mA) IF(AV) - Average Forward Current (A) Fig. 8 - Typical MOSFET Gate Threshold Voltage Fig. 11 - Maximum Allowable Forward Current vs. Case Temperature 100 200 90 180 80 160 70 140 60 120 IF (A) ISD (A) 150 TJ = 25 °C TJ = 125 °C TJ = 150 °C 50 40 100 TJ = 175 °C 80 30 60 20 40 10 20 0 TJ = 125 °C TJ = 25 °C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD (V) VFM (V) Fig. 9 - Typical MOSFET Body Diode Forward Current Characteristics Fig. 12 - Typical Chopper Diode Forward Characteristics Revision: 13-Jun-16 Document Number: 94856 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC80NA20 www.vishay.com Vishay Semiconductors 1 80 75 70 Tj = 175 °C 0.1 65 0.01 trr (ns) IRM (mA) 60 Tj = 125 °C TJ = 125 °C 55 50 45 40 Tj = 25 °C 0.001 35 TJ = 25 °C 30 25 0.0001 20 50 75 100 125 150 175 200 100 200 300 400 500 VR (V) dIF/dt (A/μs) Fig. 13 - Typical Chopper Diode Reverse Leakage Current Fig. 16 - Typical Chopper Diode Reverse Recovery Time vs. dIF/dt Vrr = 100 V, IF = 30 A 18 1000 14 tr TJ = 125 °C 12 td(on) Irr (A) Switching Time (ns) 16 100 td(off) 10 8 TJ = 25 °C 6 4 tf 2 10 0 0 10 20 30 40 50 60 70 80 100 90 200 300 400 500 ID (A) dIF/dt (A/μs) Fig. 14 - Typical MOSFET Switching Time vs. ID TJ = 125 °C, VDD = 100 V, Rg = 2.5 , VGS = 10 V, L = 500 μH Fig. 17 - Typical Chopper Diode Reverse Recovery Current vs. dIF/dt Vrr = 100 V, IF = 30 A 500 1000 400 td(on) td(off) TJ = 125 °C 350 100 Qrr (nC) Switching Time (ns) 450 tr tf 300 250 200 150 TJ = 25 °C 100 50 10 0 2 4 6 8 10 12 14 16 Rg (Ω) Fig. 15 - Typical MOSFET Switching Time vs. Rg TJ = 125 °C, VDD = 100 V, ID = 80 A, L = 500 μH 100 200 300 400 500 dIF/dt (A/μs) Fig. 18 - Typical Chopper Diode Reverse Recovery Charge vs. dIF/dt Vrr = 100 V, IF = 30 A Revision: 13-Jun-16 Document Number: 94856 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC80NA20 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.75 0.50 0.25 0.10 0.05 0.02 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (MOSFET) ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.1 0.75 0.50 0.25 0.10 0.05 0.02 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 20 - Maximum Thermal Impedance Characteristics (Chopper Diode) Revision: 13-Jun-16 Document Number: 94856 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC80NA20 www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (D) 3 (D) 2 (G) 4 (A) 1 (S, K) 2 (G) 1 (S, K) High side chopper 4 (A) N 4 3 1 2 ORDERING INFORMATION TABLE Device code VS- F C 80 N A 20 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - MOSFET module 3 - MOSFET die generation 4 - Current rating (80 = 80 A) 5 - N = high side chopper 6 - Package indicator SOT-227 7 - Voltage rating (20 = 200 V) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 13-Jun-16 Document Number: 94856 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000