1SMB2EZ6.8~1SMB2EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • High temperature soldering : 260°C /10 seconds at terminals • In compliance with EU RoHS 2002/95/EC directives MECHANICALDATA • Case: JEDEC DO-214AA, Molded plastic over passivated junction • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: Indicated by cathode band • Standard packing: 12mm tape (E1A-481) • Weight: 0.0032 ounce, 0.092 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol Value Units Peak Pulse Power Dissipation on TL =50 O C (Notes A) Derate above 50 O C PD 3.0 W atts Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 15 Amps TJ,TSTG -55 to + 150 Operating Junction and Storage Temperature Range O C NOTES: A.Mounted on 5.0mm2 (.013mm thick) land areas. B.Measured on 8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum STAD-FEB.10.2009 1 PAGE . 1 1SMB2EZ6.8~1SMB2EZ51 N o m i na l Ze ne r V o l t a g e Part Number V Z @ IZT No m. V Max. Reverse Leakage Current M a x i m u m Z e n e r Im p e d a n c e Z ZT @ IZT IZT Z ZK @ IZK IZK IR @VR M i n. V M a x. V Ω mA Ω mA µA V Marking C ode 2.0 watt Zener Diodes 1SMB2EZ6.8 6.8 6.46 7.14 2 73.5 700 1 5 4 2006 1SMB2EZ7.5 7.5 7.13 7.88 2 66.5 700 0.5 5 5 2007 1SMB2EZ8.2 8.2 7.79 8.61 2 61 700 0.5 5 6 2008 1SMB2EZ8.7 8.7 8.27 9.14 2 58 700 0.5 4 6.6 20A 8 1SMB2EZ9.1 9.1 8.65 9.56 3 55 700 0.5 3 7 2009 1SMB2EZ10 10 9.5 10.5 4 50 700 0.25 3 7.6 2010 1SMB2EZ11 11 10.45 11.55 4 45.5 700 0.25 1 8.4 2011 1SMB2EZ12 12 11.4 12.6 5 41.5 700 0.25 1 9.1 2012 1SMB2EZ13 13 12.35 13.65 5 38.5 700 0.25 0.5 9.9 2013 1SMB2EZ14 14 13.3 14.7 6 35.7 700 0.25 0.5 10.6 2014 1SMB2EZ15 15 14.25 15.75 7 33.4 700 0.25 0.5 11.4 2015 1SMB2EZ16 16 15.2 16.8 8 31.2 700 0.25 0.5 12.2 2016 1SMB2EZ17 17 16.15 17.85 9 29.4 750 0.25 0.5 13 2017 1SMB2EZ18 18 17.1 18.9 10 27.8 750 0.25 0.5 13.7 2018 1SMB2EZ19 19 18.05 19.95 11 26.3 750 0.25 0.5 14.4 2019 1SMB2EZ20 20 19 21 11 25 750 0.25 0.5 15.2 2020 1SMB2EZ22 22 20.9 23.1 12 22.8 750 0.25 0.5 16.7 2022 1SMB2EZ24 24 22.8 25.2 13 20.8 750 0.25 0.5 18.2 2024 1SMB2EZ25 25 23.75 26.25 14 20 750 0.25 0.5 19 2025 1SMB2EZ27 27 25.65 28.35 18 18.5 750 0.25 0.5 20.6 2027 1SMB2EZ28 28 26.6 29.4 18 17 750 0.25 0.5 21.3 2028 1SMB2EZ30 30 28.5 31.5 20 16.6 1000 0.25 0.5 22.5 2030 1SMB2EZ33 33 31.35 34.65 23 15.1 1000 0.25 0.5 25.1 2033 1SMB2EZ36 36 34.2 37.8 25 13.9 1000 0.25 0.5 27.4 2036 1SMB2EZ39 39 37.05 40.95 30 12.8 1000 0.25 0.5 29.7 2039 1SMB2EZ43 43 40.85 45.15 35 11.6 1500 0.25 0.5 32.7 2043 1SMB2EZ47 47 44.65 49.35 40 10.6 1500 0.25 0.5 35.8 2047 1SMB2EZ51 51 48.45 53.55 48 9.8 1500 0.25 0.5 38.8 2051 STAD-FEB.10.2009 1 PAGE . 2 1SMB2EZ6.8~1SMB2EZ51 1 2 3 APPLICATION NOTE: Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determinejunction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, T L , should be determined from: T L = LA P D + T A O L A is the lead-to-ambient thermal resistance ( C/W) and Pd is the power dissipation. The value for L A will vary and depends on the device mounting method. L A is generally 30-40 OC/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: T J = T L + T JL T JL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses or from Figure 10 for dc power. T JL = J L P D For worst-case design, using expected limits of I Z , limits of P D and the extremes of T J ( T J ) may be estimated. Changes in voltage, V Z , can then be found from: V = V Z T J V Z , the zener voltage temperature coefficient, is found from Figures 5 and 6. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 2 should not be used to compute surge capa-bility. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 3 be exceeded. STAD-FEB.10.2009 1 PAGE . 3 1SMB2EZ6.8~1SMB2EZ51 RANGE 4 6 5 7 8 STAD-FEB.10.2009 1 PAGE . 4 1SMB2EZ6.8~1SMB2EZ51 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 3K per 13" plastic Reel T/R - 0.5Kper 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-FEB.10.2009 1 PAGE . 4