PANJIT 1SMB2EZ36

1SMB2EZ6.8~1SMB2EZ100
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
VOLTAGE
6.8 to 100 Volts
POWER
2.0 Watts
SMB/DO-214AA
Unit: inch (mm)
FEATURES
• Low profile package
.155(3.94)
.130(3.30)
• Built-in strain relief
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
.083(2.11)
• Typical ID less than 1.0µA above 11V
.075(1.91)
• Low inductance
.185(4.70)
.160(4.06)
• High temperature soldering : 260°C /10 seconds at terminals
Case: JEDEC DO-214AA, Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
.083(2.13)
MECHANICALDATA
.012(.305)
.006(.152)
.096(2.44)
• Pb free product are available : 99% Sn can meet RoHS environment
substance directive request
.050(1.27)
.030(0.76)
Polarity: Indicated by cathode band
.008(.203)
.002(.051)
.220(5.59)
.200(5.08)
Standard packing: 12mm tape (E1A-481)
Weight: 0.003 ounce, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Units
Peak Pulse Power Dissipation on TA=50O C (Notes A)
Derate above 70O C
PD
2.0
24.0
W atts
mW/ O C
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
15
Amps
TJ,TSTG
-55 to + 150
Operating Junction and Storage Temperature Range
O
C
NOTES:
A.Mounted on 5.0mm2 (.013mm thick) land areas.
B.Measured on 8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum
STAD-JUL.16.2005
PAGE . 1
1SMB2EZ6.8~1SMB2EZ100
N o m i na l Ze ne r V o l t a g e
Part Number
V Z @ IZT
No m. V
Max. Reverse
Leakage Current
M a x i m u m Z e n e r Im p e d a n c e
Z ZT @ IZT
IZT
Z ZK @ IZK
IZK
IR @VR
M i n. V
M a x. V
O hm s
mA
O hm s
mA
µA
V
Marking
C ode
P a cka g e
2.0 watt Zener Diodes
1SMB2EZ6.8
6.8
6.46
7.14
2
73.5
700
1.00
5.00
4.00
2006
SMB
1SMB2EZ7.5
7.5
7.13
7.88
2
66.5
700
0.50
5.00
5.00
2007
SMB
1SMB2EZ8.2
8.2
7.79
8.61
2
61.0
700
0.50
5.00
6.00
2008
SMB
1SMB2EZ8.7
8.7
8.27
9.14
2
58.0
700
0.50
4.00
6.60
20A 8
SMB
1SMB2EZ9.1
9.1
8.65
9.56
3
55.0
700
0.50
3.00
7.00
2009
SMB
1SMB2EZ10
10
9..50
10.50
4
50.0
700
0.25
3.00
7.60
2010
SMB
1SMB2EZ11
11
10.45
11.55
4
45.5
700
0.25
1.00
8.40
2011
SMB
1SMB2EZ12
12
11.40
12.60
5
41.5
700
0.25
1.00
9.10
2012
SMB
1SMB2EZ13
13
12.35
13.65
5
38.5
700
0.25
0.50
9.90
2013
SMB
1SMB2EZ14
14
13.30
14.70
6
35.7
700
0.25
0.50
10.60
2014
SMB
1SMB2EZ15
15
14.25
15.75
7
33.4
700
0.25
0.50
11.40
2015
SMB
1SMB2EZ16
16
15.20
16.80
8
31.2
700
0.25
0.50
12.20
2016
SMB
1SMB2EZ17
17
16.15
17.85
9
29.4
750
0.25
0.50
13.00
2017
SMB
1SMB2EZ18
18
17.10
18.90
10
27.8
750
0.25
0.50
13.70
2018
SMB
1SMB2EZ19
19
18.05
19.95
11
26.3
750
0.25
0.50
14.40
2019
SMB
1SMB2EZ20
20
19.00
21.00
11
25.0
750
0.25
0.50
15.20
2020
SMB
1SMB2EZ22
22
20.90
23.10
12
22.8
750
0.25
0.50
16.70
2022
SMB
1SMB2EZ24
24
22.80
25.20
13
20.8
750
0.25
0.50
18.20
2024
SMB
1SMB2EZ25
25
23.75
26.25
14
20.0
750
0.25
0.50
19.00
2025
SMB
1SMB2EZ27
27
25.65
28.35
18
18.5
750
0.25
0.50
20.60
2027
SMB
1SMB2EZ28
28
26.60
29.40
18
17.0
750
0.25
0.50
21.30
2028
SMB
1SMB2EZ30
30
28.50
31.50
20
16.6
1000
0.25
0.50
22.50
2030
SMB
1SMB2EZ33
33
31.35
34.65
23
15.1
1000
0.25
0.50
25.10
2033
SMB
1SMB2EZ36
36
34.20
37.80
25
13.9
1000
0.25
0.50
27.40
2036
SMB
1SMB2EZ39
39
37.05
40.95
30
12.8
1000
0.25
0.50
29.70
2039
SMB
1SMB2EZ43
43
40.85
45.15
35
11.6
1500
0.25
0.50
32.70
2043
SMB
1SMB2EZ47
47
44.65
49.35
40
10.6
1500
0.25
0.50
35.80
2047
SMB
1SMB2EZ51
51
48.45
53.55
48
9.8
1500
0.25
0.50
38.80
2051
SMB
1SMB2EZ56
56
53.20
58.80
55
9.0
2000
0.25
0.50
42.60
2056
SMB
1SMB2EZ60
60
57.00
63.00
58
8.5
2000
0.25
0.50
45.60
2060
SMB
1SMB2EZ62
62
58.90
65.10
60
8.1
2000
0.25
0.50
47.10
2062
SMB
1SMB2EZ68
68
64.60
71.40
75
7.4
2000
0.25
0.50
51.70
2068
SMB
1SMB2EZ75
75
71.25
78.75
90
6.7
2000
0.25
0.50
56.00
2075
SMB
1SMB2EZ82
82
77.90
86.10
100
6.1
3000
0.25
0.50
62.20
2082
SMB
1SMB2EZ87
87
82.65
91.35
120
5.8
3000
0.25
0.50
66.10
2087
SMB
1SMB2EZ91
91
86.45
95.55
125
5.5
3000
0.25
0.50
69.20
2091
SMB
1SMB2EZ100
100
95.00
105.00
175
5.0
3000
0.25
0.50
76.00
2100
SMB
STAD-JUL.16.2005
PAGE . 2
1SMB2EZ6.8~1SMB2EZ100
1
2
3
APPLICATION NOTE:
Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determinejunction
temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended:
Lead Temperature, T L , should be determined from:
T L = q LA P D + T A
O
q L A is the lead-to-ambient thermal resistance ( C/W) and Pd is the power dissipation. The value for q L A will vary and depends
on the device mounting method. q L A is generally 30-40 OC/W for the various clips and tie points in common use and for printed
circuit board wiring.
The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of
TL, the junction temperature may be determined by:
T J = T L + D T JL
D T JL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses
or from Figure 10 for dc power.
D T JL = q J L P D
For worst-case design, using expected limits of I Z , limits of P D and the extremes of T J ( D T J ) may be estimated. Changes in voltage,
V Z , can then be found from:
DV = qVZ DTJ
q V Z , the zener voltage temperature coefficient, is found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance.
For best regulation, keep current excursions as low as possible.
Data of Figure 2 should not be used to compute surge capa-bility. Surge limitations are given in Figure 3. They are lower than would
be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small
spots resulting in device degradation should the limits of Figure 3 be exceeded.
STAD-JUL.16.2005
PAGE . 3
1SMB2EZ6.8~1SMB2EZ100
RANGE
4
6
5
7
8
STAD-JUL.16.2005
PAGE . 4