165

NTE165
Silicon NPN Transistor
TV Horizontal Output
Description:
The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal
output applications.
Features:
D High Voltage
D High Power
D High Switching Speed
D Good Stability
Applications:
D Consumer
D Power Supply
D Color TV Horizontal Deflection
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A
Base Current (Peak), IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Total Power Dissipation (TC ≤ +95°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W
Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +115°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +115°C
Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter−Base Breakdown Voltage
DC Current Gain
Collector−Emitter Saturation Voltage
Symbol
ICES
Test Conditions
VCE = 1500V, VBE = 0
V(BR)EBO IE = 1mA, IC = 0
hFE
VCE(sat)
VCE = 5V, IC = 4.5A
IC = 4.5A, IB = 2A
Min
Typ
Max
Unit
−
−
1.0
mA
5
−
−
V
2.25
−
−
−
−
5
V
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Base−Emitter Saturation Voltage
VBE(sat)
IC = 4.5A, IB = 2A
−
−
1.5
V
Collector−Emitter Sustaining Voltage
VCEO(sus) IC = 100mA, IB = 0, L = 25mH
700
−
−
V
IE = 10mA, IC = 0
10
−
−
V
VCE = 5V, IC = 100mA
−
7
−
MHz
VCB = 10V, IE = 0, f = 1MHz
−
125
−
pF
Emitter−Base Voltage
VEBO
Transition Frequency
fT
Collector Output Capacitance
Cob
Switching Characteristics
Storage Time
ts
IC = 4.5A (Peak), IB(end) = 1.8A
−
0.7
−
µs
Fall Time
tf
IC = 4.5A (Peak), IB(end) = 1.8A
−
10
−
µs
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case