2637

NTE2637
Silicon NPN Transistor
CRT Horizontal Deflection, High Voltage,
Fast Switching
TO3P Full Pack
Features:
D High Breakdown Voltage Capability
D Fully Insulated Package for Easy Mounting
D Low Saturation Voltage
D High Switching Speed
Applications:
D Horizontal Deflection Stage in Standard and High Resolution Displays for TVs and Monitors
D Switching Power Supply for TVs and Monitors
Absolute Maximum Ratings:
Collector−Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Collector−Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Emitter−Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak (tp < 5ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak (tp < 5ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICES
IEBO
Test Conditions
VCE = 1700V,
VBE = 0
VEB = 5V, IC = 0
TJ = +125°C
Min
Typ
Max
Unit
−
−
1
mA
−
−
2
mA
−
−
100
μA
Rev. 3−11
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Collector−Emitter Sustaining Voltage
Emitter−Base Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
700
−
−
V
IE = 10mA, IC = 0
10
−
−
V
VCEO(sus) IC = 100mA
VEBO
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 5A, IB = 1.25A, Note 1
−
−
1.5
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 5A, IB = 1.25A, Note 1
−
−
1.3
V
IC = 5A, VCE = 5V,
Note 1
6
−
−
4
−
−
VCC = 400V, IC = 5A, IB1 = 1.25A,
IB2 = 2.5A
−
2.7
3.9
μs
−
190
280
ns
IC = 5A, f = 15625Hz, IB1 = 1.25A,
IB2 = 2.5A,
Vceflyback = 1050 sin(π/10 106)t V
−
2.3
−
μs
−
350
−
ns
IC = 5A, f = 31250Hz, IB1 = 1.25A,
IB2 = 2.5A,
Vceflyback = 1200 sin(π/10 106)t V
−
2.3
−
μs
−
200
−
ns
DC Current Gain
hFE
TJ = +100°C
Resistive Load
Storage Time
ts
Fall Time
tf
Resistive Load
Storage Time
ts
Fall Time
tf
Storage Time
ts
Fall Time
tf
Note 1. Pulsed: Pulse Duration = 300μs, Duty Cycle = 1.5%.
.217 (5.5)
.118 (3.0)
.610 (15.5)
.441
(11.2)
.906
(23.0)
.177
(4.5)
Isol
.965
(24.5)
B
1.709
(43.4)
Max
.079
(2.0)
.429 (10.9)
C
E