RSD200N10 Transistors 4V Drive Nch MOSFET RSD200N10 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET CPT3 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be r30V. 5) Drive circuits can be simple. 6) Parallel use is easy. (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Source) zApplications Switching zPackaging specifications ! ! ! ! zInner circuit Package Taping TL Code Type ∗2 2500 Basic ordering unit (pieces) RSD200N10 ∗1 BODY DIODE ∗2 ESD PROTECTION DIODE ∗1 zAbsolute maximum ratings (Ta=25qC) Symbol Limits Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 V ∗3 ±20 A ∗1 ±80 A 20 A ∗1 80 A Parameter Continuous Drain current Source current (Body Diode) ID Pulsed IDP Continuous IS Pulsed ISP Avalanche Current IAS ∗2 20 A Avalanche Energy EAS ∗2 85 mJ Total power dissipation (Tc=25°C) PD 20 W Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 °C (1)GATE (2)DRAIN (3)SOURCE (1) (2) (3) ∗1 Pw≤10μs, Duty cycle≤1% ∗2 L 265μH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum tempterature allowed zThermal resistance Parameter Channel to case Symbol Limits Unit Rth(ch-c) 6.25 °C/W Rev.A 1/5 RSD200N10 Transistors zElectrical characteristics (Ta=25qC) Parameter Min. Typ. Max. Unit IGSS − − ±10 μA VGS=±20V, VDS=0V V(BR)DSS 100 − − V ID=1mA, VGS=0V Symbol Gate-source leakage Drain-source breakdown voltage Conditions IDSS − − 10 μA VDS=100V, VGS=0V Gate threshold voltage VGS(th) 1.0 − 2.5 V VDS=10V, ID=1mA − Static drain-source on-state resistance RDS(on) ∗ Forward transfer admittance | Yfs | Zero gate voltage drain current ∗ 41 52 mΩ ID=10A, VGS=10V − 44 58 mΩ ID=10A, VGS=4.5V − 45 59 mΩ ID=10A, VGS=4.0V 14 − − S ID=10A, VDS=10V Input capacitance Ciss − 2200 − pF VDS=25V Output capacitance Coss − 180 − pF VGS=0V Reverse transfer capacitance Crss pF f=1MHz Turn-on delay time td(on) tr Rise time Turn-off delay time td(off) tf Fall time Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd − 110 − ∗ − 18 − ns ID=10A, VDD 50V ∗ − 61 − ns VGS=10V ∗ − 128 − ns RL=5Ω ∗ − 193 − ns RG=10Ω ∗ − 48.5 − nC ∗ − 5.5 − nC ∗ − 13 − nC VDD 50V ID=20A VGS=10V RL=2.5Ω / RG=10Ω ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25qC) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. 1.5 Unit V Conditions IS= 20A, VGS=0V ∗ Pulsed Rev.A 2/5 RSD200N10 Transistors zElectrical characteristic curves Gate Source Voltage : VGS(V) 15 T a=25°C VDD=50V ID=20A Pulsed 10 5 0 0 10 20 30 40 50 Total Gate Charge : Qg(nC) Fig.3 Dynamic Input Characteristics ! ! ! ! Rev.A 3/5 RSD200N10 Transistors ! ! Rev.A 4/5 RSD200N10 Transistors zSwitching characteristics measurement circuit Fig.1-1 Switching time measurement circuit Fig.2-1 Gate charge measurement circuit Fig.3-1 Avalanche measurement circuit Fig.1-2 Switching waveforms Fig.2-2 Gate charge waveform Fig.3-2 Avalanche waveform Rev.A 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0