SP8M2 Transistors 4V Drive Nch+Pch MOS FET SP8M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions (Unit : mm) SOP8 5.0 1.75 0.4 (5) (1) (4) 0.2 1.27 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). (8) Each lead has same dimensions zApplications Switching zPackage specifications Package (8) Taping (7) (6) (5) TB Code Type zInner circuit Basic ordering unit (pieces) 2500 SP8M2 ∗2 ∗2 ∗1 (1) ∗1 (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits Tr1 : N-ch Tr2 : P-ch 30 −30 20 −20 ±3.5 ±3.5 ±14 ±14 1.6 −1.6 14 −14 2.0 150 −55 to +150 Unit V V A A A A W / TOTAL °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. 1/3 SP8M2 Transistors N-ch zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate threshold voltage Parameter − 30 − 1.0 − − − 2.0 − − − − − − − − − − − − − − 59 93 107 − 140 45 30 6 6 17 4 2.5 0.8 0.8 10 − 1 2.5 83 130 150 − − − − − − − − 3.5 − − Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Conditions Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 3.5A, VGS= 10V ID= 3.5A, VGS= 4.5V ID= 3.5A, VGS= 4V VDS= 10V, ID= 3.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 1.75A VGS= 10V RL= 8.57Ω RG=10Ω VDD 15V, VGS= 5V ID= 3.5A RL= 4.29Ω, RG= 10Ω Unit V IS= 6.4A, VGS=0V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. − − 1.2 Conditions ∗Pulsed 2/3 SP8M2 Transistors P-ch zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 IDSS Zero gate voltage drain current − VGS (th) −1.0 Gate threshold voltage − Static drain-source on-state RDS (on)∗ − resistance − Yfs ∗ 1.8 Forward transfer admittance Ciss − Input capacitance Coss Output capacitance − Crss Reverse transfer capacitance − Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ Typ. Max. − − − − 65 100 120 − 490 110 75 10 15 35 10 5.5 1.5 2.0 −10 − −1 −2.5 90 140 165 − − − − − − − − 7.7 − − Conditions Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS= −20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −3.5A, VGS= −10V ID= −1.75A, VGS= −4.5V ID= −1.75A, VGS= −4V VDS= −10V, ID= −1.75A VDS= −10V VGS= 0V f=1MHz VDD −15V ID= −1.75A VGS= −10V RL= 8.57Ω RG= 10Ω VDD −15V, VGS= −5V ID= −3.5A RL= 4.29Ω, RG= 10Ω Unit V IS= −1.6A, VGS=0V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. − − −1.2 Conditions ∗Pulsed 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. 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