ROHM SP8M2

SP8M2
Transistors
4V Drive Nch+Pch MOS FET
SP8M2
zStructure
Silicon N-channel MOS FET /
Silicon P-channel MOS FET
zExternal dimensions (Unit : mm)
SOP8
5.0
1.75
0.4
(5)
(1)
(4)
0.2
1.27
1pin mark
0.4Min.
3.9
6.0
zFeatures
1) Low on-resistance.
2) Built-in G-S protection diode.
3) Small surface mount package (SOP8).
(8)
Each lead has same dimensions
zApplications
Switching
zPackage specifications
Package
(8)
Taping
(7)
(6)
(5)
TB
Code
Type
zInner circuit
Basic ordering unit (pieces)
2500
SP8M2
∗2
∗2
∗1
(1)
∗1
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
Tr1 : N-ch
Tr2 : P-ch
30
−30
20
−20
±3.5
±3.5
±14
±14
1.6
−1.6
14
−14
2.0
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
°C
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
1/3
SP8M2
Transistors
N-ch
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
IDSS
Zero gate voltage drain current
VGS (th)
Gate threshold voltage
Parameter
−
30
−
1.0
−
−
−
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
59
93
107
−
140
45
30
6
6
17
4
2.5
0.8
0.8
10
−
1
2.5
83
130
150
−
−
−
−
−
−
−
−
3.5
−
−
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Conditions
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VGS=20V, VDS=0V
ID= 1mA, VGS=0V
VDS= 30V, VGS=0V
VDS= 10V, ID= 1mA
ID= 3.5A, VGS= 10V
ID= 3.5A, VGS= 4.5V
ID= 3.5A, VGS= 4V
VDS= 10V, ID= 3.5A
VDS= 10V
VGS=0V
f=1MHz
VDD 15V
ID= 1.75A
VGS= 10V
RL= 8.57Ω
RG=10Ω
VDD 15V, VGS= 5V
ID= 3.5A
RL= 4.29Ω, RG= 10Ω
Unit
V
IS= 6.4A, VGS=0V
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
Typ.
Max.
−
−
1.2
Conditions
∗Pulsed
2/3
SP8M2
Transistors
P-ch
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
IGSS
−
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS −30
IDSS
Zero gate voltage drain current
−
VGS (th) −1.0
Gate threshold voltage
−
Static drain-source on-state
RDS (on)∗
−
resistance
−
Yfs ∗ 1.8
Forward transfer admittance
Ciss
−
Input capacitance
Coss
Output capacitance
−
Crss
Reverse transfer capacitance
−
Turn-on delay time
−
td (on) ∗
Rise time
−
tr ∗
Turn-off delay time
−
td (off) ∗
Fall time
−
tf ∗
Total gate charge
−
Qg ∗
Gate-source charge
−
Qgs ∗
Gate-drain charge
−
Qgd ∗
Typ.
Max.
−
−
−
−
65
100
120
−
490
110
75
10
15
35
10
5.5
1.5
2.0
−10
−
−1
−2.5
90
140
165
−
−
−
−
−
−
−
−
7.7
−
−
Conditions
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VGS= −20V, VDS=0V
ID= −1mA, VGS=0V
VDS= −30V, VGS=0V
VDS= −10V, ID= −1mA
ID= −3.5A, VGS= −10V
ID= −1.75A, VGS= −4.5V
ID= −1.75A, VGS= −4V
VDS= −10V, ID= −1.75A
VDS= −10V
VGS= 0V
f=1MHz
VDD −15V
ID= −1.75A
VGS= −10V
RL= 8.57Ω
RG= 10Ω
VDD −15V, VGS= −5V
ID= −3.5A
RL= 4.29Ω, RG= 10Ω
Unit
V
IS= −1.6A, VGS=0V
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
Typ.
Max.
−
−
−1.2
Conditions
∗Pulsed
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1