US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions (Unit : mm) 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M02 zApplications Switching zPackaging specifications Package (6) Taping (5) (4) TR Code Type zInner circuit Basic ordering unit (pieces) ∗1 3000 US6M2 ∗2 ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr1 (Nch) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Limits Unit Tr1 : Nchannel Tr2 : Pchannel 30 V −20 12 −12 V ±1.5 ±1 A ±6 ±4 A 0.6 −0.4 A 6 −4 A 1.0 W / TOTAL Tch Tstg 0.7 150 −55 to +150 W / ELEMENT °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits 125 179 Unit °C/W / TOTAL °C/W / ELEMENT ∗ Mounted on a ceramic board Rev.A 1/3 US6M2 Transistors N-ch zElectrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 30 − 0.5 − − − 1.5 − − − − − − − − − − Typ. Max. − − − − 170 180 240 − 80 13 12 7 9 15 6 1.6 0.5 0.3 10 − 1 1.5 240 250 340 − − − − − − − − 2.2 − − Conditions Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS=12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 4V ID= 1.5A, VGS= 2.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.75A VGS= 4.5V RL= 20Ω RG=10Ω VDD 15V, VGS= 4.5V ID= 1.5A RL= 10Ω, RG= 10Ω Unit V Conditions IS= 0.6A, VGS=0V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. 1.2 Rev.A 2/3 US6M2 Transistors P-ch zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS −20 IDSS Zero gate voltage drain current − Gate threshold voltage VGS (th) −0.7 − Static drain-source on-state RDS (on)∗ − resistance − Yfs ∗ 0.7 Forward transfer admittance Ciss − Input capacitance Coss − Output capacitance Crss − Reverse transfer capacitance td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time Qg ∗ − Total gate charge Qgs ∗ − Gate-source charge Qgd ∗ − Gate-drain charge Typ. Max. − − − − 280 310 570 − 150 20 20 9 8 25 10 2.1 0.5 0.5 10 − −1 −2.0 390 430 800 − − − − − − − − − − − Conditions Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS= −12V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −1A, VGS= −4.5V ID= −1A, VGS= −4V ID= −0.5A, VGS= −2.5V VDS= −10V, ID= −0.5A VDS= −10V VGS= 0V f=1MHz VDD −15V ID= −0.5A VGS= −4.5V RL= 30Ω RG= 10Ω VDD −15V, VGS= −4.5V ID= −1A RL= 15Ω, RG= 10Ω Unit V Conditions IS= −0.4A, VGS=0V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. −1.2 Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1