ROHM US6M2TR

US6M2
Transistors
2.5V Drive Nch+Pch MOSFET
US6M2
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zDimensions (Unit : mm)
0.2Max.
TUMT6
zFeatures
1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.
2) High-speed switching, low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in G-S Protection Diode.
Abbreviated symbol : M02
zApplications
Switching
zPackaging specifications
Package
(6)
Taping
(5)
(4)
TR
Code
Type
zInner circuit
Basic ordering unit (pieces)
∗1
3000
US6M2
∗2
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Limits
Unit
Tr1 : Nchannel Tr2 : Pchannel
30
V
−20
12
−12
V
±1.5
±1
A
±6
±4
A
0.6
−0.4
A
6
−4
A
1.0
W / TOTAL
Tch
Tstg
0.7
150
−55 to +150
W / ELEMENT
°C
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
zThermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ∗
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
∗ Mounted on a ceramic board
Rev.A
1/3
US6M2
Transistors
N-ch
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
IDSS
Zero gate voltage drain current
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
30
−
0.5
−
−
−
1.5
−
−
−
−
−
−
−
−
−
−
Typ.
Max.
−
−
−
−
170
180
240
−
80
13
12
7
9
15
6
1.6
0.5
0.3
10
−
1
1.5
240
250
340
−
−
−
−
−
−
−
−
2.2
−
−
Conditions
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VGS=12V, VDS=0V
ID= 1mA, VGS=0V
VDS= 30V, VGS=0V
VDS= 10V, ID= 1mA
ID= 1.5A, VGS= 4.5V
ID= 1.5A, VGS= 4V
ID= 1.5A, VGS= 2.5V
VDS= 10V, ID= 1.5A
VDS= 10V
VGS=0V
f=1MHz
VDD 15V
ID= 0.75A
VGS= 4.5V
RL= 20Ω
RG=10Ω
VDD 15V, VGS= 4.5V
ID= 1.5A
RL= 10Ω, RG= 10Ω
Unit
V
Conditions
IS= 0.6A, VGS=0V
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD
Min.
−
Typ.
−
Max.
1.2
Rev.A
2/3
US6M2
Transistors
P-ch
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
−
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS −20
IDSS
Zero gate voltage drain current
−
Gate threshold voltage
VGS (th) −0.7
−
Static drain-source on-state
RDS (on)∗
−
resistance
−
Yfs ∗ 0.7
Forward transfer admittance
Ciss
−
Input capacitance
Coss
−
Output capacitance
Crss
−
Reverse transfer capacitance
td (on) ∗
−
Turn-on delay time
tr ∗
−
Rise time
td (off) ∗
−
Turn-off delay time
tf ∗
−
Fall time
Qg ∗
−
Total gate charge
Qgs ∗
−
Gate-source charge
Qgd ∗
−
Gate-drain charge
Typ.
Max.
−
−
−
−
280
310
570
−
150
20
20
9
8
25
10
2.1
0.5
0.5
10
−
−1
−2.0
390
430
800
−
−
−
−
−
−
−
−
−
−
−
Conditions
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VGS= −12V, VDS=0V
ID= −1mA, VGS=0V
VDS= −20V, VGS=0V
VDS= −10V, ID= −1mA
ID= −1A, VGS= −4.5V
ID= −1A, VGS= −4V
ID= −0.5A, VGS= −2.5V
VDS= −10V, ID= −0.5A
VDS= −10V
VGS= 0V
f=1MHz
VDD −15V
ID= −0.5A
VGS= −4.5V
RL= 30Ω
RG= 10Ω
VDD −15V, VGS= −4.5V
ID= −1A
RL= 15Ω, RG= 10Ω
Unit
V
Conditions
IS= −0.4A, VGS=0V
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD
Min.
−
Typ.
−
Max.
−1.2
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1