364

NTE364
Silicon NPN Transistor
RF Power
Description:
The NTE364 is designed for UHF large signal applications required in industrial and commercial FM
equipment operating at 512MHz.
Features:
D Specified 10 Volt, 512MHz Characteristics:
Power Output = 10W
Minimum Gain = 6.0dB
D RF ballasting provides protection against device damage due to load mismatch
D Characterized with series equivalent large−signal impedance parameters
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V
Collector Current−Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A
Total Device Dissipation (TC = +25C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37.5W
Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214mW/C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Stud Torque (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5 in−lbs
Note 1 This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as RF amplifier.
Note 2 For repeated assembly use 5 in−lbs.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
V(BR)CEO IC = 200mA, IB = 0
16
−
−
V
V(BR)CES IC = 200mA, VBE = 0
36
−
−
V
V(BR)EBO IE = 4.0mA, IC = 0
4
−
−
V
−
0.5
20
mA
ICES
VCE = 15V, VBE = 0, TC = 55C
Rev. 5−13
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Collector Cutoff Current
Test Conditions
Min Typ Max Unit
ICBO
VCB = 15V, IE = 0
−
−
2.0
mA
hFE
IC = 500mA, VCE = 5.0V
20
80
−
−
Cob
VCB = 12.5V, IE = 0, f = 1.0MHz
−
38
45
pF
On Characteristics
DC Current Gain
Dynamic Characteristics
Output Capacitance
Functional Test
Common−Emitter Amplifier Power Gain
−
VCC = 12.5V, Pout = 10W, IC = 1.33A
6.0
7.0
−
Collector Efficiency

VCC = 12.5V, Pout = 10W, IC = 1.3A,
f = 470MHz
60
−
−
B
.225 (5.72)
E
E
.530
(13.46)
C
.063 (1.62)
.282 (7.17)
Dia
.005 (0.15)
.123 (3.12)
.630
(16.0)
Seating Plane
Wrench Flat
.250 (6.35) Dia
%