NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz. Features: D Specified 12.5V, 175MHz Characteristics: Output Power: 40W Minimum Gain: 4.5dB Efficiency: 70% D Available in Two Different Package Styles: T72 Stud Mount: NTE320 W52K Flange Mount: NTE320F Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Device Dissipation (TC = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 460mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Stud Torque (NTE320 Only, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5in. lb. Note 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. Note 2. For repeated assembly, use 5in. lb. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 100mA, IB = 0 18 – – V V(BR)CES IC = 20mA, VBE = 0 36 – – V V(BR)EBO IE = 10mA, IC = 0 4 – – V OFF Characteristics Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current ICES VCE = 15V, VBE = 0, TC = +55°C – – 10 mA ICBO VCB = 15V, IE = 0 – – 2.5 mA hFE IC = 1A, VCE = 5V 5 – – Cob VCB = 15V, IE = 0, f = 0.1MHz – 170 200 pF GPE PO = 40W, VCC = 12.5V, f = 175MHz 4.5 – – dB η PO = 40W, VCC = 12.5V, f = 175MHz 70 – – % ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Function Test Common–Emitter Amplifier Power Gain Collector Efficiency 175MHz Test Circuit +12.5Vdc + 100µF 0.1µF RFC 1000pF SHIELD C1 L2 C4 RF Output L1 RF Input DUT C2 C1, C2, C3, C4 L1 RFC 5.0 – 80pF ARCO 462 Straight Wire, #14 AWG, 1–3/8” Long 100pF L2 RFC 100pF C3 1 Turn, #14 AWG, 3/8” ID, Length Plus Leads = 1.000 VK200–20/4B, FERROXCUBE NTE320 (T72, Stud Mount) 1.060 (26.92) Max .530 (13.46) C .225 (5.72) E E B .375 (9.52) Dia .075 (1.9) .250 (6.35) .720 (18.28) 8–32–NC–3A Wrench Flat NTE320F (W52K, Flange Mount) .725 (18.42) .122 (3.1) Dia (2 Holes) E C B E .250 (6.35) .225 (5.72) .860 (21.84) .378 (9.56) .005 (0.15) .255 (6.5) .185 (4.7) .975 (24.77) .085 (2.14)