NTE354 Silicon NPN Transistor RF Power Output PO = 15W @ 175MHz Description: The NTE354 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: D Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggedness. D Low lead Inductance Stripline Packaging for Easier Design and Increased Broadband Capabilities D Flange Package for Easy Mounting and Better Thermal Conductivity to Heat Sink. D Exceptional Power Output Stability versus Temperature. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Total Device Dissipation (TC = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 20mA, IB = 0 18 – – V V(BR)CES IC = 10mA, VBE = 0 36 – – V V(BR)EBO IE = 2mA, IC = 0 4 – – V ICBO VCB = 15V, IE = 0 – – 250 µA ICES VCE = 15V, VBE = 0, TC = +55°C – – 500 µA Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE VCE = 5V, IC = 500mA 15 – – Cob VCB = 12.5V, IE = 0, f = 100kHz – 90 120 pF GPE POUT = 15W, VCC = 12.5V, ICmax = 1.9A, f = 175MHz 6.3 – – dB POUT = 15W, VCC = 12.5V, f = 175MHz 55 – – % Dynamic Characteristics Output Capacitance Functional Test Common–Emitter Amplifier Power Gain η Collector Efficiency .122 (3.1) Dia (2 Holes) .725 (18.42) E C B E .250 (6.35) .225 (5.72) .860 (21.84) .378 (9.56) .005 (0.15) .255 (6.5) .185 (4.7) .975 (24.77) .085 (2.14)