NTE NTE339

NTE339
Silicon NPN Transistor
RF Power Output
Description:
The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large−
signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz.
D Specified 12.5 Volt, 50MHz Characteristics
Output Power = 40 Watts
Minimum Gain = 7.5dB
Efficiency = 50%
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Total Device Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 571mW/°C
Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperatures Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.55°C/W
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
V(BR)CEO IC = 200mA, IB = 0, Note 2
24
−
−
V
V(BR)CES IC = 100mA, VBE = 0, Note 2
48
−
−
V
V(BR)EBO IC = 0, IE = 10mA
4
−
−
V
OFF Characteristics
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
ICBO
VCB = 15V, IE = 0
−
−
1.0
mA
ICES
VCB = 15V, IE = 0, TA = +125°C
−
−
10
mA
hFE
VCE = 5V, IC = 2.4A
3
7
−
Cob
VCB = 12.5V, IE = 0, f = 0.1 to 1.0MHz
−
180
230
pF
GPE
POUT = 40W, VCC = 12.5V, f = 50MHz
7.5
−
−
dB
50
−
−
%
ON Characteristics
DC Current Gain
Dynamic Characteristics
Output Capacitance
Functional Test
Common−Emitter Amplifier Power Gain
Collector Efficiency
η
Note 2. Pulsed through 25mH inductor.
1.065 (27.05) Max
.525 (13.35)
C
45°
.225
(5.72)
E
E
.112 (2.85)
.395 (10.05)
B
.500 (12.7) Dia
.090 (2.28)
.260 (6.6)
.075 (1.9)
.420 (10.66) Dia
.115 (2.92)
10−32 NC−3A
Wrench Flat