NTE339 Silicon NPN Transistor RF Power Output Description: The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large− signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz. D Specified 12.5 Volt, 50MHz Characteristics Output Power = 40 Watts Minimum Gain = 7.5dB Efficiency = 50% Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Device Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 571mW/°C Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperatures Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.55°C/W Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 200mA, IB = 0, Note 2 24 − − V V(BR)CES IC = 100mA, VBE = 0, Note 2 48 − − V V(BR)EBO IC = 0, IE = 10mA 4 − − V OFF Characteristics Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current ICBO VCB = 15V, IE = 0 − − 1.0 mA ICES VCB = 15V, IE = 0, TA = +125°C − − 10 mA hFE VCE = 5V, IC = 2.4A 3 7 − Cob VCB = 12.5V, IE = 0, f = 0.1 to 1.0MHz − 180 230 pF GPE POUT = 40W, VCC = 12.5V, f = 50MHz 7.5 − − dB 50 − − % ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Test Common−Emitter Amplifier Power Gain Collector Efficiency η Note 2. Pulsed through 25mH inductor. 1.065 (27.05) Max .525 (13.35) C 45° .225 (5.72) E E .112 (2.85) .395 (10.05) B .500 (12.7) Dia .090 (2.28) .260 (6.6) .075 (1.9) .420 (10.66) Dia .115 (2.92) 10−32 NC−3A Wrench Flat