218

NTE218
Silicon PNP Transistor
Audio Power Output
Description:
The NTE218 is ideal for use as a driver, switch and medium−power amplifier applications. This device
features:
Features:
D Low Saturation Voltage − 0.6VCE(sat) @ IC = 1A
D High Gain Characteristics − hFE @ IC = 250mA: 30−100
D Excellent Safe Area Limits
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.143W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Note 1 Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
Electrical Characteristics: (TC = +25°C unless otherwise sepcified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
80
−
−
V
OFF Characteristics
Colector−Emitter Sustaining Voltage
VCEO(sus) IC = 100mA, IB = 0, Note 1
Emitter Cutoff Current
IEBO
VEB = 7V
−
−
0.5
mA
Collector Cutoff Current
ICEX
VCE = 80V, VBE(off) = 1.5V
−
−
100
μA
VCE = 60V, VBE(off) = 1.5V, TC = +150°C
−
−
1.0
mA
ICEO
VCE = 60V, IB = 0
−
−
1.0
mA
ICBO
VCB = 80V, IE = 0
−
−
100
μA
Rev. 3−12
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise sepcified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCE = 1V, IC = 100mA
40
−
−
VCE = 1V, IC = 250mA
30
−
100
VCE = 1V, IC = 500mA
20
−
−
VCE = 1V, IC = 1A
10
−
−
IC = 1A, IB = 125mA
−
−
0.6
V
VCE = 1V, IC = 250mA
−
−
1.0
V
VCE = 1V, IC = 250mA, f = 1MHz
3
−
−
MHz
pF
ON Characteristics (Note 1)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Voltage
hFE
VCE(sat)
VBE
Transient Characteristics
Current Gain Bandwidth Product
fT
Common Base Output Capacitance
Cob
VCE = 10V, IC = 0, f = 100kHz
−
−
100
Small−Signal Current Gain
hfe
VCE = 10V, IC = 50mA, f = 1kHz
25
−
−
Note 1 Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
.295 (7.5)
.485 (12.3)
Dia
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.360
(9.14)
Min
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
.145 (3.7) R Max
Collector/Case
Emitter