Ordering number:EN4905 FX507 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications Package Dimensions · LCD baklight drive. unit:mm 2118 Features [FX507] · Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. · The FX507 houses two chips, each being equivalent to the 2SC3647, in one package. · Matched pair characteristics. 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 SANYO:XP6 (Bottom view) Switching Time Test CIrcuit Electrical Connection 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 (Top view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit 120 V Collector-to-Emitter Voltage VCBO VCEO 100 V Emitter-to-Base Voltage VEBO 6 V IC 2 A ICP 3 Collector Current Collector Current (Pulse) Base Current IB Collector Dissipation PC Mounted on ceramic board (750mm2×0.8mm) 1unit Total Dissipation Mounted on ceramic board (750mm2×0.8mm) Junction Temperature PT Tj Storage Temperature Tstg · Marking:507 A 400 mA 1.5 W 2 W 150 ˚C –55 to +150 ˚C Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/42695MO (KOTO) BX-1460 No.4905-1/4 FX507 Continued from preceding page. Electrical Characteristics at Ta = 25˚C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time hFE(small/ large) fT Cob VCE(sat) VBE(sat) Conditions Ratings min typ VCB=100V, IE=0 VEB=4V, IC=0 VCE=5V, IC=100mA VCE=5V, IC=100mA 140 max 100 nA 100 nA 400 0.8 VCE=10V, IC=100mA VCB=10V, f=1MHz 120 IC=1A, IB=100mA IC=1A, IB=100mA 130 400 0.85 1.2 V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ V(BR)EBO ton IE=10µA, IC=0 See sepcified Test Circuit tstg tf Unit MHz 16 pF mV V 120 V 100 V 6 V 80 ns See sepcified Test Circuit 1000 ns See sepcified Test Circuit 50 ns No.4905-2/4 FX507 No.4905-3/4 FX507 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4905-4/4