124

NTE124
Silicon NPN Transistor
High Voltage Power Output
Description:
The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters,
inverters, deflection stages, and high fidelity amplifiers.
Features:
Collector–Emitter Sustaining Voltage: VCEO(sus) = 300V @ IC = 5mA
DC Current Gain: hFE = 40 – 200 @ IC = 100mA
Current–Gain – Bandwidth Product: fT = 10MHz (Min) @ IC = 100mA
IS/b Rated to 2A
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (TC = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.133W/°C
Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5°C/W
Electrical Charactersitics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 5mA, IB = 0, Note 1
300
–
–
V
Collector–Emitter Cutoff Current
ICEO
VCE = 200V, IB = 0
–
–
0.25
mA
Collector–Base Cutoff Current
ICBO
VCB = 325V, IE = 0
–
–
0.1
mA
Collector Cutoff Current
ICEV
VCE = 300V, VEB(off) = 1.5V
–
–
0.5
mA
VCE = 200V, VEB(off) = 1.5V,
TC = +100°C
–
–
1.0
mA
IEBO
VEB = 6V
–
–
0.1
mA
hFE
IC = 50mA, VCE = 10V
30
–
–
IC = 100mA, VCE = 10V
40
–
200
IC = 250mA, VCE = 10V
25
–
–
Emitter–Base Cutoff Current
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 250mA, IB = 25mA
–
–
2.5
V
Base–Emitter “ON” Voltage
VBE(on)
IC = 100mA, VCE = 10V
–
–
1.0
V
fT
IC = 100mA, VCE = 10V,
f = 10MHz, Note 2
10
–
–
MHz
pF
Small–Signal Characteristics
Current–Gain – Bandwidth Product
Output Capacitance
Cob
VCB = 100V, IE = 0, f = 100kHz
–
–
20
Small–Signal Current Gain
hfe
IC = 100mA, VCE = 20V, f = 1kHz
35
–
–
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. fT = |hfe| frequency
.485 (12.3)
Dia
.295 (7.5)
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.360 (9.14)
Min
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
.145 (3.7) R Max
Collector/Case
Emitter