2345

NTE2345 (NPN) & NTE2346 (PNP)
Silicon Complementary Transistors
General Purpose Darlington, Power Amplifier
Description:
The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an
SOT−82 type package designed for use in audio output stages and general amplifier and switching
applications..
Features:
D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V
D Junction Temperature to +150°C
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak (tp ≤ 10ms, δ ≤ 0.1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08K/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W
Note 1. NTE2346 is a discontinued device and no longer available.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Min
Typ
Max
Unit
IE = 0, VCBO = 120V
−
−
0.2
mA
IE = 0, VCBO = 120V, TJ = +150°C
−
−
2mA
mA
ICEO
IB = 0, VCEO = 60V
−
−
0.5
mA
Emitter Cutoff Current
IEBO
IC = 0, VEBO = 5V
−
−
5
mA
DC Current Gain
hFE
IC = 500mA, VCEO = 3V, Note 1
−
2700
−
IC = 3A, VCEO = 3V, Note 2
750
−
−
IC = 6A, VCEO = 3V, Note 2
−
400
−
Collector Cutoff Current
Symbol
ICBO
Test Conditions
Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Base−Emitter Voltage
VBE
Collector−Emitter Saturation Voltage
VCE(sat)
Test Conditions
Min
Typ
Max
Unit
IC = 3A, VCEO = 3V, Note 3
2.5
−
−
V
IC = 3A, IB = 12mA
2.0
−
−
V
Small−Signal Current Gain
hfe
IC = 3A, VCEO = 3V, f = 1MHz
10
−
−
Cut−Off Frequency
fhfe
IC = 3A, VCEO = 3V
−
100
−
kHz
Diode, Forward Voltage
VF
IF = 3A
−
1.8
−
V
VCEO = 60V, tp = 25ms
1
−
−
A
Second Breakdown Collector Current
Non−Repetitive, without Heatsink
I(SB)
Turn−On Time
ton
IC(on) = 3A, IB(on) = IB(off) = 12mA
−
1
2
μs
Turn−Off Time
toff
IC(on) = 3A, IB(on) = IB(off) = 12mA
−
5
10
μs
Note 3. VBE decreases by about 3.8mV/K with increasing temperature.
Schematic Diagram
C
C
B
B
E
E
NPN
PNP
.307 (7.8)
Max
.100 (2.54)
See Note
.147
(3.75)
.118 (3.0)
Min
.437
(11.1)
Max
B
C
E
.100 (2.54)
.602
(15.3)
Min
.090 (2.29)
.047 (1.2)
Note: Collector connected to metal part of mounting surface.