268

NTE268 (NPN) & NTE269 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202
type package designed for amplifier and driver applications where high gain is an essential require‐
ment, low power lamp and relay drivers and power drivers for high-current applications such as volt‐
age regulators.
Features:
D Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 1.5A
D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C
Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V
Colllector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W
Derate Above 25°C (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C
Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Note 1. Pulse Width ≤ 25ms, Duty Cycle ≤ 50%.
Note 2. The actual power dissipation capability of the TO202 type package is 2W @ TA = +25°C.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
50
-
-
V
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V(BR)CEO IC = 10mA, Note 3
ICBO
VCB = 50V, IE = 0, TJ = +150°C
-
-
20
μA
ICES
VCE = 50V, VBE = 0
-
-
0.5
μA
IEBO
VEB = 13V, IC = 0
-
-
100
nA
hFE
IC = 200mA, VCE = 5V
10000
-
-
IC = 1.5A, VCE = 5V
1000
-
-
ON Characteristics (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 1.5A, IB = 3mA
-
-
1.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC = 1.5A, IB = 3mA
-
-
2.5
V
VCB = 10V, IE = 0, f = 1MHz
-
-
10
pF
-
-
25
pF
1.0
-
-
Dynamic Characteristics
Collector Capacitance
NTE268
Ccb
NTE269
High Frequency Current Gain
|hfe|
IC = 20mA, VCE = 5V, f = 100MHz
Note 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
NTE268
C
.380 (9.56)
B
.180 (4.57)
.132 (3.35) Dia
C
E
.500
(12.7)
.325
(9.52)
1.200
(30.48)
Ref
.070 (1.78) x 45°
Chamf
.300
(7.62)
.050 (1.27)
NTE269
C
.400
(10.16)
Min
B
E
E
.100 (2.54)
B
C
.100 (2.54)