NTE268 (NPN) & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require‐ ment, low power lamp and relay drivers and power drivers for high-current applications such as volt‐ age regulators. Features: D Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 1.5A D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V Colllector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W Derate Above 25°C (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/°C Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W Note 1. Pulse Width ≤ 25ms, Duty Cycle ≤ 50%. Note 2. The actual power dissipation capability of the TO202 type package is 2W @ TA = +25°C. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 50 - - V OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current V(BR)CEO IC = 10mA, Note 3 ICBO VCB = 50V, IE = 0, TJ = +150°C - - 20 μA ICES VCE = 50V, VBE = 0 - - 0.5 μA IEBO VEB = 13V, IC = 0 - - 100 nA hFE IC = 200mA, VCE = 5V 10000 - - IC = 1.5A, VCE = 5V 1000 - - ON Characteristics (Note 4) DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC = 1.5A, IB = 3mA - - 1.5 V Base-Emitter Saturation Voltage VBE(sat) IC = 1.5A, IB = 3mA - - 2.5 V VCB = 10V, IE = 0, f = 1MHz - - 10 pF - - 25 pF 1.0 - - Dynamic Characteristics Collector Capacitance NTE268 Ccb NTE269 High Frequency Current Gain |hfe| IC = 20mA, VCE = 5V, f = 100MHz Note 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. NTE268 C .380 (9.56) B .180 (4.57) .132 (3.35) Dia C E .500 (12.7) .325 (9.52) 1.200 (30.48) Ref .070 (1.78) x 45° Chamf .300 (7.62) .050 (1.27) NTE269 C .400 (10.16) Min B E E .100 (2.54) B C .100 (2.54)