107

NTE107
Silicon NPN Transistor
UHF Oscillator for Tuner
Description:
The NTE107 is a silicon NPN planar epitaxial transistor in a TO92 type package designed specifically
for high frequency applications. This device is suitable for use as an oscillator in UHF television tuners.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Lead temperature (During Soldering, 1/16” ±1/32” from case, 10sec), TL . . . . . . . . . . . . . . . +260°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA
30
–
–
V
Collector–Emitter Breakdown Voltage V(BR)CEO ICEO = 3mA, Note 1
12
–
–
V
Emitter–Base Breakdown Voltage
3
–
–
V
V(BR)EBO IE = 100µA
Collector Cutoff Current
ICBO
VCB = 15V, IE = 0
–
–
0.5
µA
Emitter Cutoff Current
IEBO
VEB = 2V, IC = 0
–
–
0.5
µA
Forward Current Transfer Ratio
hFE
VCE = 10V, IC = 8mA
20
75
–
VCE(sat) IC = 10mA, IB = 1mA
–
–
0.6
Collector Saturation Voltage
Note 1. Pulse test: Pulse Width = 1µs, Duty Cycle = 1%.
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
fT
IC = 5mA, VCE = 10V, f = 100MHz
700
–
0.8
–
1.5
pF
–
4.0
6.5
dB
Dynamic Characteristics
Current Gain–Bandwidth Product
Output Capacitance
Cob
VCE = 10V, IE = 0, f = 1MHz
Noise Figure
NF
IC = 1mA, VCB = 6V, f = 60MHz,
RG = 400Ω
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E C B
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
2100 MHz