NTE47 Silicon NPN Transistor High Gain, Low Noise Amp Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W Note 1 RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 2 45 – – V Colletor–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 45 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 6.5 – – V – 1.0 50 nA Collector Cutoff Current ICBO VCB = 30V, IE = 0 hFE VCE = 5V, IC = 10µA 400 580 – VCE = 5V, IC = 100µA 500 850 – VCE = 5V, IC = 1mA 500 1100 – VCE = 5V, IC = 10mA 500 1150 – IC = 10mA, IB = 0.5mA – – 0.2 V IC = 50mA, IB = 0.5mA – 0.08 0.3 V VCE = 5V, IC = 1mA – 0.6 0.7 V ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage VCE(sat) VBE(on) Note 2 Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Electrical Characteristics: (TA = +25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 100 160 – MHz VCB = 5V, IE = 0, f = 1MHz – 1.7 3.0 pF VCE = 5V, IC = 100µA, RS = 10kΩ, f = 10Hz to 15.7MHz – 0.5 1.5 dB VCE = 5V, IC = 100µA, RS = 1.0kΩ, f = 100Hz – 4.0 – dB Small–Signal Characteristics Current Gain–Bandwidth Product Output Capaciatnce fT Cobo Noise Figure NF VCE = 5V, IC = 1mA, f = 100MHz .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max