MMBT3906

MMBT3906
Silicon PNP Transistor
General Purpose Amp, Surface Mount
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Device Dissipation (Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C
Thermal Resistance, Junction−to−Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 375C/W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55  to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55  to +150C
Note 1. These are steady−state limits and are based on a maximum junction temperature of +150C.
Note 2. Device is mounted on FR−4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0, Note 3
40
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO
IC = 10A, IE = 0
40
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO
IE = 10A, IC = 0
5
−
−
V
IBL
VCE = 30V, VBE = 3V
−
−
50
nA
ICEX
VCE = 30V, VBE = 3V
−
−
50
nA
hFE
VCE = 1V, IC = 0.1mA
60
−
−
VCE = 1V, IC = 1mA
80
−
−
VCE = 1V, IC = 10mA
100
−
300
VCE = 1V, IC = 50mA
60
−
−
VCE = 1V, IC = 100mA
30
−
−
IC = 10mA, IB = 1mA
−
−
0.25
V
IC = 50mA, IB = 5mA
−
−
0.40
V
IC = 10mA, IB = 1mA
0.65
−
0.85
V
IC = 50mA, IB = 5mA
−
−
0.95
V
Base Cut−Off Current
Collector Cutoff Current
ON Characteristics
DC Current Gain (Note 3)
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
fT
IC = 10mA, VCE = 20V, f = 100MHz
250
−
−
MHz
Small−Signal Characteristics
Current Gain−Bandwidth Product
Output Capacitance
Cobo
VCB = 5V, IE = 0, f = 100kHz
−
−
4.5
pF
Input Capacitance
Cibo
VEB = 0.5V, IC = 0, f = 100kHz
−
−
10
pF
Noise Figure
NF
VCE = 5V, IC = 100A, RS = 1k,
f = 10Hz to 15.7kHz
−
−
4
dB
VCC = 3V, VBE = 0.5V,
IC = 10mA, IB1 = 1mA
−
−
35
ns
−
−
35
ns
VCC = 3V, IC = 10mA,
IB1 = IB2 = 1mA
−
−
225
ns
−
−
75
ns
Switching Characteristics
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
.016 (0.48)
C
B
.098
(2.5)
Max
E
.037 (0.95)
.074 (1.9)
.051
(1.3)
.118 (3.0) Max
.043 (1.1)
.007 (0.2)