2N3019

2N3019
Silicon NPN Transistor
Audio Output, Video, Driver
TO−5 Type Package
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation, PD
TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30C/W
Note 1. Stresses exceeding Absolute Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating Conditions
is not implied. Extended exposure to stresses above the Recommended Operating Conditions
may affect device reliability.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
80
−
−
V
VEB = 5V
−
−
10
nA
VEB = 7V
−
−
10
A
OFF Characteristics
Collector−Emitter Breakdown Voltage
Emitter−Base Cutoff Current
V(BR)CEO IC = 30mA
IEBO
Collector−Emitter Cutoff Current
ICEO
VCE = 90V
−
−
10
nA
Collector−Base Cutoff Current
ICBO
VCE = 140V
−
−
10
A
hFE
IC = 0.1mA, VCE = 10V
50
−
300
IC = 10mA, VCE = 10V
90
−
−
IC = 150mA, VCE = 10V
100
−
300
IC = 500mA, VCE = 10V
50
−
300
IC = 1.0A, VCE = 10V
15
−
−
IC = 150mA, IB = 15mA
−
−
0.2
V
IC = 500mA, IB = 50mA
−
−
0.5
V
IC = 150mA, IB = 15mA
−
−
1.1
V
ON Characteristics (Note 2)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle  2%.
Electrical Characteristics (Cont’d): TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Small−Signal Characteristics
Magnitude of Small-Signal Current-Gain
|hfe|
IC = 50mA, VCE = 10V, f = 20MHz
5.0
−
20
Small−Signal Current Gain
hfe
IC = 1mA, VCE = 5V, f = 1kHz
80
−
400
Output Capacitance
Cobo
VCB = 10V, IE = 0, 100kHz  f  1MHz
−
−
12
pF
Input Capacitance
Cibo
VBE = 500mV, IC = 0,100kHz  f  1MHz
−
−
60
pF
Noise Figure
NF
IC = 100A, VCE = 10V, Rg = 1k,
PBW = 200Hz
−
−
4
dB
IC = 10mA, VCB = 10V, f = 79.8MHz
−
−
400
ps
−
−
30
ns
Collector−Base Time Constant
rbCc
Switching Characteristics
Pulse Response
ton + toff
.352 (8.95) Dia Max
.320 (8.13) Dia Max
.250
(6.35)
Max
.500
(12.7)
Min
.019 (0.5)
Base
Emitter
Collector/Case
45
.031 (.793)