MPSL51

MPSL51
Silicon PNP Transistor
High Voltage, General Purpose Amplifier
TO−92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector−Base Voltage, VCBE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation @ TA = +25C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C
Total Device Dissipation @ TC = +25C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C/mW
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +83.3C/mW
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0, Note 1
100
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 100A, IE = 0
100
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10A, IC = 0
4
−
−
V
Collector Cutoff Current
ICBO
VCB = 50V, IE = 0
−
−
1
A
Emitter Cutoff Current
IEBO
VEB = 3V, IC = 0
−
−
100
nA
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%.
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
IC = 50mA, VCE = 5V
40
−
250
VCE(sat) IC = 10mA, IB = 1mA
−
−
0.25
V
IC = 50mA, IB = 5mA
−
−
0.30
V
IC = 10mA, IB = 1mA
−
−
1.2
V
IC = 50mA, IB = 5mA
−
−
1.2
V
IC = 10mA, VCE = 10V, f = 20MHz
60
−
−
MHz
VCB = 10V, IE = 0, f = 1MHz
−
−
8
pF
IC = 1mA, VCE = 10V, f = 1kHz
20
−
−
VBE(sat)
Small−Signal Characteristics
Current Gain − Bandwidth Product
Output Capacitance
fT
Cobo
Small−Signal Current Gain
hfe
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max