PN3645

PN3645
Silicon PNP Transistor
Audio Amplifier, Switch
TO−92 Type Package
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Total Device Dissipation (TA = 25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Thermal Resistance, Junction to Ambient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Note 1. These ratings are limiting values above which the serviceability of any semiconductor device
may be impaired and are based on a maximum junction temperature of +150C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IB = 0, Note 2
60
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 100A, IE = 0
60
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10A, IC = 0
5
−
−
V
VCB = 50V, IE = 0
−
−
35
nA
VCB = 50V, IE = 0, TA = +65C
−
−
2
A
IBL
VCE = 50V, IC = 0
−
−
35
nA
hFE
VCE = 10V, IC = 0.1mA
40
−
−
VCE = 10V, IC = 1mA
80
−
−
VCE = 10V, IC = 10mA
100
−
−
VCE = 10V, IC = 150mA
100
−
300
VCE = 2V, IC = 300mA
20
−
−
VCE = 1V, IC = 50mA
80
−
240
IC = 50mA, IB = 2.5mA
−
−
0.25
V
IC = 150mA, IB = 15mA
−
−
0.4
V
Collector Cutoff Current
Base Cutoff Current
ICES
ON Characteristics (Note 2)
DC Current Gain
Collector−Emitter Saturation Voltage
VCE(sat)
Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IC = 50mA, IB = 2.5mA
−
−
1.0
V
IC = 150mA, IB = 15mA
−
−
1.3
V
ON Characteristics (Cont’d) (Note 2)
Base−Emitter Saturation Voltage
VBE(sat)
Small Signal Characteristics
Output Capacitance
Cob
VCB = 10V, f = 140kHz
−
−
8
pF
Input Capacitance
Cib
VBE = 0.5V, f = 140kHz
−
−
35
pF
Small−Signal Current Gain
hfe
IC = 20mA, VCE = 20V, f = 100MHz
2.0
−
−
Turn−On Time
ton
−
−
40
ns
Delay Time
td
VCC = 30V, IC = 300mA,
IB1 = 30mA
−
−
25
ns
Rise Time
tr
−
−
35
ns
−
−
100
ns
−
−
70
ns
−
−
50
ns
Switching Characteristics
Turn−Off Time
toff
Storage Time
ts
Fall Time
tf
VCC = 30V, IC = 300mA,
IB1 = IB2 = 30mA
Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max