Data Sheet Switching Diode EMN11 Dimensions (Unit : mm) Applications Ultra high speed switching Land size figure (Unit : mm) 1.0 0.5 0.5 1.6±0.1 0.22±0.05 0.3 0.25 0.15 0.15 0.25 Construction Silicon epitaxial planar (1) (2) 0.5 0.5 1.55 (4) 0.45 (5) 1.2±0.1 (6) 1.6±0.1 Features 1) Ultra small mold type. (EMD6) 2) High reliability. 0.13±0.05 0～0.1 0.4 EMD6 (3) 1.0±0.1 Structure 0.5±0.05 ROHM : EMD6 JEITA : SC-75A Size dot (year week factory) Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) IFM Forward voltage (Single) Average rectified forward current (Single) Io Isurge Surge current (t=1us) (Single) Power dissipation Pd Junction temperature Tj Storage temperature Tstg 8.0±0.2 1.65±0.01 φ0.8±0.1 4.0±0.1 0～0.1 1.65±0.1 1PIN 1.65±0.1 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 0.65±0.1 Limits Unit V V mA mA A mW/Total * °C °C 80 80 300 100 4 150 150 55 to 150 *Pd=120mW when only 1 circuit is operating. CONDITION=Each terminal mounted on a recommended land pattern.(0.35x0.9mm) Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Min. Typ. Max. Unit Conditions - - 1.2 V IF=100mA Reverse current IR - - 0.1 μA VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.B Data Sheet EMN11 Ta=150℃ 10000 Ta=75℃ Ta=25℃ Ta=150℃ Ta=-25℃ 1 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 0 100 200 300 400 500 600 700 800 900 1000 0.1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 30 40 50 60 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 80 90 REVERSE CURRENT:IR(nA) 940 930 920 910 80 70 60 50 40 AVE:9.655nA 30 20 1.2 1.1 1 VF DISPERSION MAP 0.8 0.7 IR DISPERSION MAP Ct DISPERSION MAP 10 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 8.3ms 10 5 AVE:3.50A 5 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 9 8 7 6 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 5 4 3 2 1 0 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 100 9 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=10mA IF=100MA 10 1ms time 300us 1 0.001 ELECTROSTATIC DDISCHARGE TEST ESD(KV) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 AVE:1.040pF 0.9 0.5 0 15 1.3 0.6 10 AVE:921.7m 900 20 Ta=25℃ VR=6V f=1MHz n=10pcs 1.4 Ta=25℃ VR=80V n=10pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=100mA n=30pcs 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1.5 100 950 FORWARD VOLTAGE:VF(mV) 1 0.01 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=125℃ f=1MHz Ta=125℃ REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 8 7 6 5 4 3 2 1 0 0.01 0.1 1 10 100 TIME:t(ms) Rth-t CHARACTERISTICS 2/2 1000 AVE:2.54kV AVE:0.97kV C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A