WFU5N65L Product Description Silicon N-Channel MOSFET Features D � 5.0A,650V,RDS(on)(Max2.7Ω)@VGS=10V � Ultra-low Gate charge(Typical 12nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) G S General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction. Absolute Maximum Ratings Symbol VDSS Parameter Value Units 650 V Continuous Drain Current(@Tc=25℃) 5 A Continuous Drain Current(@Tc=100℃) 2.8 A 16 A ±30 V Drain Source Voltage ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 202 mJ EAR Repetitive Avalanche Energy (Note1) 14 mJ 77 W 0.62 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Channel Temperature Thermal Characteristics Value Symbol Parameter Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 1.62 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 110 ℃/W WT-F080-Rev.A0 Aug 2014 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 1014 WFU5N65L Product Description Silicon N-Channel MOSFET Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Drain Cut -off current Test Condition Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V VDS=650V,VGS=0V - - 1.0 µA VDS=500V,Tc=125℃ - - 100 µA - 0.65 - V/℃ IDSS △BVDSS/△TJ ID=250 µA,Referenced to 25℃ Breakdown voltage Temperature coefficient V(BR)DSS ID=250 µA,VGS=0V 650 - - V Gate threshold voltage VGS(th) VDS=VGS,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=2.0A - 2.3 2.7 Ω Drain -source breakdown voltage Input capacitance Ciss VDS=25V, - 512 - Reverse transfer capacitance Crss VGS=0V, - 2.5 - Output capacitance Coss f=1MHz - 56 - VDD=325V, - 27 - Turn-on Rise time tr Turn-on delay time Td(on) ID=5.0A - 14 - tf RG=25Ω - 28 - - 34 - - 12 - - 3.2 - - 5.0 - Switching time pF ns Turn-off Fall time (Note3,4) Td(off) Turn-off delay time Total gate charge(gate-source VDD=480V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=5.0A (Note3,4) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 5 A Pulse drain reverse current IDRP - - - 16 A Forward voltage(diode) VDSF IDR=5.0A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=5.0A,VGS=0V, - 431 - ns Reverse recovery charge Qrr dIDR /dt =100 A /µs - 2.1 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=30mH IAS=3.36A,VDD=100V,RG=25Ω,Starting TJ=25℃ 3.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 4. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 2/8 WFU5N65L Product Description Silicon N-Channel MOSFET 10 To p 100 VG S 4 .5 V 10 ID [A ] I D [A] 5 .0 V 5 .5 V 6 .0 V 7 .0 V 8 .0 V 10V 15V 1 -5 5 ° C 2 5 °C 1 5 0 °C 1 No te s: 1 .2 5 0 µs p u lse te st 2 .VD S =5 0 V Notes: 1.250µs pulse test 2.Tc = 25°C 0 .1 0 .1 1 100 10 0 1 2 3 4 6 5 7 8 9 10 VG S [V] VD S [V] Fig.2 Transfer Characteristics Fig.1 On Region Characteristics 100 4 .0 3 .5 V GS =10V 10 V G S =20V 2 .5 I DR [A] R DS(ON)[ Ω] 3 .0 2 .0 1 5 0 °C -5 5 ° C 2 5 °C 1 1 .5 Notes: 1.250µs pulse test 2.VG S =0V 1 .0 Note:TJ =25°C 0 .5 0 .1 0 2 8 6 4 0 0 .2 0 .4 0 .6 I D [A ] 1 .0 1 .2 1 .4 VS D [V] Fig.3 On-Resistance Variation vs Drain Current and Gate Voltage Fig.4 Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 1000 Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd C rss=C gd 900 800 10 520V C o ss 325V 700 8 VGS (V) pF 0 .8 600 C is s 500 130V 6 400 4 300 Note: 1.VG S =0V 2.f=1MHz C rs s 200 2 100 Note:I D=5.0A 0 0 .1 0 10 1 0 100 2 VD S [V] WINSEMI MICROELECTRONICS WINSEMI 8 6 10 12 14 Qg(nC) Fig.6 Gate Charge Characteristics Fig.5 Capacitance Characteristics www.winsemi.com 4 MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 3/8 WFU5N65L Product Description Silicon N-Channel MOSFET 1 .2 3 .0 2 .5 R DS( ON) BVDSS 1 .1 1 .0 2 .0 1 .5 1 .0 0 .9 Note: 1.VG S =0V 2.ID =250uA 0 .8 -1 0 0 Note: 1.VG S =10V 2.ID =2.5A 0 .5 0 .0 -5 0 50 0 100 150 200 -1 0 0 -5 0 50 0 T J (° C ) 150 200 T J (° C ) Fig.7 Breakdown Voltage Variation vs. Temperature 10 100 Fig.8 On-Resistance Variation vs. Temperature 2 6 O p e ra ti o n i n T h i s A re a i s L i m i te d b y RDS(ON) 5 10 100µs 1m s 1 4 10 I D [A] I D [A] 10m s D C 0 3 2 10 -1 No te s: 1 1 . Tc=2 5 °C 2 . TJ=150°C 3.Single pulse 10 -2 10 0 10 1 10 2 10 0 3 25 50 100 75 125 V D S [V] Tc(° C ) Fig.9 Maximum Safe Operation Area Fig.10 Maximum Drain Current vs Case temperature WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI 150 MICROELECTRONICS 4/8 WFU5N65L Product Description Silicon N-Channel MOSFET 50K Ω 12V VG S Same type as D U T Qg 200nF 10V 300nF VD S VG S Qg s Qg d DUT 3m A Ch a rg e Fig.11 Gate Test circuit & Waveform VD S RG RL VD S 90% VD D VG S VG S DUT 10V 10% td(on) tr td(off) to n tf to f f Fig.12 Resistive Switching Test Circuit & Waveform L EA S = VD S B V DSS B V D S S - VD D B V DSS IA S ID RG VD D DUT 10V 1 L IA S 2 2 I D( t) VD S( t ) VD D tp tp Tim e Fig.13 Unclamped Inductive Switching Test Circuit & Waveform WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 5/8 WFU5N65L Product Description Silicon N-Channel MOSFET DUT VD S IS D L Driver RG S am e Type as DUT VG S VD D dv/dt controlled by RG IS D conteolled by pulse period VG S D = (Driver) Gate Pulse Width Gate Pulse Period 10V IF M ,Body Diode Forward Current IS D di/dt (DUT) IR M Body Diode Reverse Current VD S (DUT) Body Diode Recovery dv/dt VD D VS D Body Diode Forward Voltage Drop Fig.14 Peak Diode Recovery dv/dt Test Circuit & Waveform WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 6/8 WFU5N65L Product Description Silicon N-Channel MOSFET TO-251 Package Dimension 0.852±0.15 2.3±0.20 6.6±0.20 0.508±0.05 6.10±0.20 5.32±0.20 5.0±0.30 3-0.80±0.20 3-0.76±0.10 Smooth 1.00±0.10 Matt 0.508±0.05 2.286 2.286 Note: 1.plastic body is not marked as smooth Ra=0.1 ; matt Ra=0.8 2.unmarked tolerance ± 0.15 , unlabeled corner Rmax=0.25 3.plastic body without defect ,shrinkage , cracks, bubbles and other defects 4.units dimension mm WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 7/8 WFU5N65L Product Description Silicon N-Channel MOSFET NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Room 1002, East, Phase 2, HighTech Plaza,Tian-An Cyber Park,Che gong miao, FuTian, Shenzhen, P.R. China. Post Code : 518040 Tel : +86-755-8250 6288 FAX : +86-755-8250 6299 Web Site : www.winsemi.com WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 8/8