WFF15N60 Product Description Silicon N-Channel MOSFET Features D � 15A,600V, RDS(on)(Max0.52Ω)@VGS=10V � Ultra-low Gate charge(Typical 36nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) G S General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS Parameter Value Units Drain Source Voltage 600 V Continuous Drain Current(@Tc=25℃) 15* A Continuous Drain Current(@Tc=100℃) 9.5* A 60* A ±30 V ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 245 mJ IAR Avalanche Current (note 1) 15 A EAR Repetitive Avalanche Energy (Note1) 23.9 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 9.8 V/ ns 53 W 0.42 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Channel Temperature *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Value Parameter Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 2.36 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W WT-F058-Rev.A1 Jan.2014 WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WFF15N60 Product Description Silicon N-Channel MOSFET Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Test Condition Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V VDS=600V,VGS=0V - - 10 µA 100 µA Drain cut -off current IDSS VDS=480V,TC=125℃ Drain -source breakdown voltage V(BR)DSS Breakdown voltage Temperature △BVDSS/△TJ ID=250 µA,VGS=0V 600 - - V - 0.79 - V/℃ ID=250µA,Referenced to 25 ℃ Coefficient Gate threshold voltage VGS(th) VDS=VGS,ID=250 µA 3 - 5 V Drain -source ON resistance RDS(ON) VGS=10V,ID=7.5A - 0.45 0.52 Ω Forward Transconductance gfs VDS=40V,ID=7.5A - 19.8 - S Input capacitance Ciss VDS=25V, - 2270 3000 Reverse transfer capacitance Crss VGS=0V, - 23 37 Output capacitance Coss f=1MHz - 300 405 VDD=250V, - 78 162 Turn-On Rise time tr Turn-on delay time Td(on) ID=15A - 50 101 Turn-On Fall time tf RG=25Ω - 66 128 Turn-off delay time Td(off) - 120 261 - 36 60 - 9 - - 16 - Min Type pF Switching time ns (Note4,5) Total gate charge(gate-source VDD=480V, Qg plus gate-drain) VGS=10V, nC ID=15A Gate-source charge Qgs Gate-drain("miller") Charge Qgd (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Max Unit Continuous drain reverse current IDR - - - 15 A Pulse drain reverse current IDRP - - - 60 A Forward voltage(diode) VDSF IDR=15A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=15A,VGS=0V, - 600 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 7.2 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=2.0mH IAS=15A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤15A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 2/8 WFF15N60 Product Description Silicon N-Channel MOSFET 100 VG S 15V 10V 9V 8V 7V 6 .5 V 6V 5 .5 V B ot t om 5 V 10 10 。 150 C I D[A] I D [A] To p 。 25 C 1 N o t e s: 1 . 2 5 0 u s p u lse t e s t 2 . Tc=2 5 。 C 1 N otes: 1 . 2 5 0 u s p u ls e t e s t 2 . V D S =2 0 V 0 .1 1 2 10 3 4 5 6 7 8 9 10 VG S [V] V D S [V] Fig.2 Transfer Characteristics Fig.1 On region Characteristics 0 .8 0 0 .7 5 10 0 .7 0 I D R [A ] R DS(on)[Ω] 0 .6 5 0 .6 0 0 .5 5 V G S =10V 2 5。 C 1 0 .5 0 0 .4 5 V G S =20V 0 .4 0 。 150 C 。 N o te s:T=2 5 C No t e s: 1 . 2 5 0 u s p u ls e t e s t 2 . V G S =0 V 0 .3 5 0 .3 0 0 2 4 6 8 10 12 14 16 18 20 22 0.1 0.2 0.3 0.4 0.5 I D [A] 0.7 0.8 0.9 1.0 1.1 VS D [V] Fig.3 On-Resistance Variation vs Drain current and gate voltage Fig.4 Body diode Forward voltage variation vs source current and temperature 12 10000 Ciss=Cgs+Cgd(Cds=shorted) V D S =480V C is s Crss= Cgd 1000 Coss 100 C rs s Notes: 1.VG S =0V 2.f=1MHz 10 VG S Gate Source Voltage[V] Coss=Cds+Cgd C ap a cit anc e [pF ] 0.6 V D S =380V VD S =120V 8 6 4 2 *NOTE:I D=15A 10 10 0 10 -1 0 10 1 0 10 VD S Drain-Source Voltage[V] WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 30 40 Qg Toltal Gate Charge[nC] Fig.6 Gate Charge Characteristics Fig.5 Capacitance characteristics www.winsemi.com 20 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 3/8 WFF15N60 Product Description 1 .2 0 4 .0 1 .1 5 3 .5 1 .1 0 3 .0 RDS(ON) (Normalized) BV DS (Normalized) Silicon N-Channel MOSFET 1 .0 5 1 .0 0 0 .9 5 0 .9 0 0 .8 0 -7 5 -5 0 -2 5 0 25 50 T J [。C ] 75 100 125 2 .0 1 .5 1 .0 N o te s : 1 .V G S = 0 V 2 . I D= 2 5 0 u A 0 .8 5 2 .5 Notes: 1.V G S = 10V 2.I D = 7.5A 0 .5 150 0 .0 -7 5 -5 0 Fig.7 Breakdown voltage variation vs temperature -2 5 0 25 50 。 TJ[ C ] 75 100 125 150 Fig.8 On-Resistance variation vs temperature 20 2 18 10us ID Drain Current[A] 100us 10 14 1m s 1 16 I D Drain Current[A] 10 Operation in This Area is limited by R DS(on) 12 10m s 10 10 0 10 -1 10 100m s Note: 1.T C =25。C 2.T J=150。C 3.Single Pulse 8 6 4 D C 2 -2 0 10 0 10 VD S 1 10 25 2 50 75 100 。 T C Case Temperature[ C ] D rai n-S ource Vol tage[V ] Fig.9 Maximum Safe Operation Area 125 150 Fig.10 Maximum Drain Currentvs Case temperature ZθJC (t),Thermal Response D= 0. 5 1 0. 2 0. 1 0. 05 * N o te: 0. 1 。 1.Zθ J C (t)=3.6 C/W Max. 2.Duty Factor,D=t1/t2 3.T JM-T C=P DM* Zθ J C (t) 0. 02 0. 01 PD M Single pulse 0. 01 t1 t2 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 11 t 1,Square Wave Pulse Duration [sec] Fig.11 Transient thermal Response Curve WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 4/8 WFF15N60 Product Description Silicon N-Channel MOSFET 50K Ω 12V VG S Same type as D U T Qg 200nF 10V 300nF VD S VG S Qg s Qg d DUT 3m A Ch a rg e Fig.12 Gate Test circuit & Waveform VD S RG RL VD S 90% VD D VG S VG S DUT 10V 10% td(on) tr td(off) to n tf to f f Fig.13 Resistive Switching Test Circuit & Waveform L EA S = VD S B V DSS B V D S S - VD D B V DSS IA S ID RG VD D DUT 10V 1 L IA S 2 2 I D( t) VD S( t ) VD D tp tp Tim e Fig.14 Unclamped Inductive Switching Test Circuit & Waveform WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 5/8 WFF15N60 Product Description Silicon N-Channel MOSFET DUT VD S IS D L Driver RG S am e Type as DUT VG S VD D dv/dt controlled by RG IS D conteolled by pulse period VG S Gate Pulse Width Gate Pulse Period D = (Driver) 10V IF M ,Body Diode Forward Current IS D di/dt (DUT) IR M Body Diode Reverse Current VD S (DUT) Body Diode Recovery dv/dt VD D VS D Body Diode Forward Voltage Drop Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 6/8 WFF15N60 Product Description Silicon N-Channel MOSFET TO-220F Package Dimension U n it:m m E 符 号 Symbol M IN M AX A 4 .5 4 .9 B - 1 .4 7 b 0 .7 0 .9 c 0 .4 5 0 .6 D 1 5 .6 7 1 6 .0 7 E 9 .9 6 1 0 .3 6 Q F L2 D P e L B b C 2.54TYPE F 2 .3 4 2 .7 4 L 1 2 .5 8 1 3 .3 8 L2 3 .1 3 3 .3 3 ФP 3 .0 8 3 .2 8 Q 3 .2 3 .4 Q1 2 .5 6 2 .9 6 Q1 e A e WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 7/8 WFF15N60 Product Description Silicon N-Channel MOSFET NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. 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