49

NTE49 (NPN) & NTE50 (PNP)
Silicon Complementary Transistors
General Purpose, High Voltage Amp, Driver
Description:
The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case
designed for general purpose, high voltage amplifier and driver applications.
Features:
D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA
D High Power Dissipation: PD = 10W @ TC = +25C
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/C
Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W
Rev. 5−13
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 100A, IC = 0
Collector Cutoff Current
100
−
−
V
4
−
−
V
nA
ICBO
VCB = 40V, IE = 0
−
−
100
hFE
IC = 50mA, VCE = 1V
80
125
−
IC = 250mA, VCE = 1V
60
100
−
IC = 500mA, VCE = 1V
−
55
−
IC = 250mA, IB = 10mA
−
0.18
0.4
V
IC = 250mA, IB = 25mA
−
0.1
−
V
VBE(on)
IC = 250mA, VCE = 5V
−
0.74
1.2
V
fT
IC = 250mA, VCE = 5V,
f = 100MHz, Note 1
50
150
−
MHz
VCB = 10V, IE = 0, f = 100kHz
−
6
12
pF
ON Characteristics (Note 2)
DC Current Gain
Collector−Emitter Saturation Voltage
VCE(sat)
Base−Emitter ON Voltage
Small−Signal Characteristics
Current Gain−Bandwidth Product
Output Capacitance
Cob
Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
.380 (9.56)
.180 (4.57)
.132 (3.35) Dia
C
.500
(12.7)
.325
(9.52)
1.200
(30.48)
Ref
.070 (1.78) x 45
Chamf
.300
(7.62)
.050 (1.27)
.400
(10.16)
Min
E
.100 (2.54)
B
C
.100 (2.54)