V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Infrared Emitters The Aging of Infrared Emitter Components INTRODUCTION Over its lifetime, an infrared emitter gradually loses its radiant power. This type of aging or degradation has three main causes: –– Mechanical stress deforms the crystal structure, causing loss of efficiency –– Delamination occurs between epoxy and chip, causing loss of optical coupling –– Thermal stress inflicts damage on the crystal structure The rate of device aging is determined by: –– Chip technology: GaAIAs Double Hetero (DH), bulk, and surface emitter technologies result in lower rates, while GaAIAs and GaAs technologies result in higher rates of aging –– Package technology: metal can and chip on board (COB) packaging technologies result in lower rates, and epoxy packaging technologies result in higher rates of aging Chip size: The smaller the chip, the higher the current density. A higher current density results in faster aging. RESOURCES • Infrared Emitter Selector Guide: http://www.vishay.com/doc?49495 • Optoelectronis Portfolio: http://www.vishay.com/optoelectronics/ • For technical questions, contact [email protected] PRODUCT LITERATURE 1/5 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VMN-PL0486-1507 www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Infrared Emitters DEVICE AGING AND DEVICE SELECTION Degradation rate is an important feature to consider when selecting an emitter. State-of-the-art chip technologies and high quality standards in the assembly process are essential to maintain a low degradation rate. Aging behavior varies, moreover, for the various infrared chip technologies. For example, DH, bulk, and surface emitter chips age slowly even when used in applications with high duty cycles and are thus best suited for long-term DC mode applications. GaAIAs and GaAs chips typically degrade more depending on their usage. This combined with their inherent outstanding radiant power makes them ideal for remote control (RC) applications, which of course have extremely low duty cycles. In the typical RC system in fact, the expected useful lifetime of the GaAIAs/GaAs emitter chips averages 10 or more years. APPLICATIONS –– –– –– –– Data Transmission IrDC Photo Interrupter IR Curtain –– –– –– –– Encoder DC Mode Remote Control Low Duty Cycle –– Burst Mode –– Pulse Mode –– Keyless Entry TYPICAL DEGRADATION OF RADIANT POWER AFTER 4000 h OPERATION Comparison of Major IR Emitter Chip Technologies Assembled Using T-1 3/4’’ Plastic Package Relative Radiant Power 100 95 90 85 80 75 Surface Emitter Bulk / DH GaAs GaAlAs IR Emitter Chip Technologies PRODUCT LITERATURE 2/5 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VMN-PL0486-1507 www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Infrared Emitters PACKAGE FORMS PRODUCT LITERATURE 3/5 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VMN-PL0486-1507 www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Infrared Emitters CHIP TECHNOLOGY, DEVICES AND DEDICATED APPLICATION Technology DH GaAs GaAIAs Bulk Emitter (*) Surface Emitter Performance @ Test Condition IF = 100 mA Typ. 4000 h-Degradation -5% -7% -15% -5% -5% Radiant Power 45 mW 15 mW 25 mW 40 mW 55 mW Cut-off Frequency 12 MHz 450 kHz 600 kHz 23 MHz 35 MHz Rise/Fall Time tr, tf 30 ns 800 ns 600 ns 15 ns 10 ns Wavelength 830 ... 890 nm 950 nm 870 nm 940 nm 850 nm / 940 nm T1 - TSUS4xxx TSHA4400 VSLB3940 VSLY3850 T1 3/4 TSHF5xxx / TSFF5xxx / TSHG5xxx TSUS5xxx TSHA5xxx VSLB3940 VSLY5850 Side View / SMD TSSF4500 TSKS5400 - VSMB2940SLX01 VSMY2853SL Dome SMD VSMF289x / VSMG2xxx - - VSMB2020X01 VSMY2850 PLCC-2 VSMF3710 / VSMF4710 / VSMG3700 VSMS3700 - VSMB3940 VSMY3850 0805 - - - VSMB1940 VSMY1850 Metal Can - TSTS7xxx TSTA7xxx - - High Reliability High Reliability Standard Application High Reliability High Reliability Data Transmission Photo Interrupter Keyless Entry Data Transmission Data Transmission IrDC IR Curtain Low Duty Cycle IrDC IrDC Encoder Encoder Burst Mode Encoder Encoder DC Mode DC Mode Pulse Mode DC Mode DC Mode Product Series Package Forms APPLICATIONS (*) and GaAlAs MQW PRODUCT LITERATURE 4/5 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VMN-PL0486-1507 www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Infrared Emitters SEMICONDUCTORS PASSIVE COMPONENTS MOSFETs Segment Resistors and Inductors Segment MOSFETs Low-Voltage TrenchFET® Power MOSFETs Medium-Voltage Power MOSFETs High-Voltage Planar MOSFETs High-Voltage Super Junction MOSFETs Automotive-Grade MOSFETs ICs Power Management and Power Control ICs Smart Load Switches Analog Switches and Multiplexers Film Resistors Metal Film Resistors Thin Film Resistors Thick Film Resistors Power Thick Film Resistors Metal Oxide Film Resistors Carbon Film Resistors Wirewound Resistors Vitreous, Cemented, and Housed Resistors Braking and Neutral Grounding Resistors Custom Load Banks Power Metal Strip® Resistors Battery Management Shunts Crowbar and Steel Blade Resistors Thermo Fuses Chip Fuses Pyrotechnic Initiators/Igniters Variable Resistors Cermet Variable Resistors Wirewound Variable Resistors Conductive Plastic Variable Resistors Contactless Potentiometers Hall Effect Position Sensors Precision Magnetic Encoders Networks/Arrays Non-Linear Resistors NTC Thermistors PTC Thermistors Varistors Magnetics Inductors Wireless Charging Coils Transformers Connectors Diodes Segment Rectifiers Schottky Rectifiers Ultrafast Recovery Rectifiers Standard and Fast Recovery Rectifiers High-Power Rectifiers/Diodes Bridge Rectifiers Small-Signal Diodes Schottky and Switching Diodes Zener Diodes Tuner/Capacitance Diodes Bandswitching Diodes RF PIN Diodes Protection Diodes TVS Diodes or TRANSZORB® (unidirectional, bidirectional) ESD Protection Diodes (including arrays) Thyristors/SCRs Phase-Control Thyristors Fast Thyristors IGBTs Power Modules Input Modules (diodes and thyristors) Output and Switching Modules (contain MOSFETs, IGBTs, and diodes) Custom Modules Optoelectronic Components Segment Infrared Emitters and Detectors Optical Sensors Infrared Remote Control Receivers Optocouplers Phototransistor, Photodarlington Linear Phototriac High-Speed IGBT and MOSFET Driver Solid-State Relays LEDs and 7-Segment Displays Infrared Data Transceiver Modules Custom Products PRODUCT LITERATURE Capacitors Segment Tantalum Capacitors Molded Chip Tantalum Capacitors Molded Chip Polymer Tantalum Capacitors Coated Chip Tantalum Capacitors Solid Through-Hole Tantalum Capacitors Wet Tantalum Capacitors Ceramic Capacitors Multilayer Chip Capacitors Multilayer Chip RF Capacitors Disc Capacitors Film Capacitors Power Capacitors Heavy-Current Capacitors Aluminum Capacitors ENYCAP™ Energy Storage Capacitors 5/5 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VMN-PL0486-1507 www.vishay.com