TSKS5400 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: side view lens • Dimensions (L x W x H in mm): 5 x 2.65 x 5 • Peak wavelength: λp = 950 nm • High reliability • High radiant power 14354-1 • High radiant intensity • Angle of half intensity: ϕ = ± 30° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors DESCRIPTION • Package matched with detector TEKS5400 The TSKS5400-FSZ is an infrared, 950 nm emitting diode in GaAs technology with high radiant power, molded in a clear plastic package. • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Photointerrupters • Transmissive sensors, gap sensors • Reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) TSKS5400-FSZ 4.5 ± 30 950 800 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSKS5400-FSZ PACKAGING REMARKS PACKAGE FORM Tape and ammopack MOQ: 2000 pcs, 2000 pcs/ammopack Side view lens Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER VR 6 V Forward current IF 100 mA Surge forward current TEST CONDITION tp ≤ 100 μs Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 2.4, 03-Sep-13 UNIT IFSM 2 A PV 170 mW Tj 100 °C Tamb - 25 to + 85 °C °C Tstg - 40 to + 100 t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 270 K/W Document Number: 83780 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSKS5400 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 270 K/W 80 60 40 100 80 60 RthJA = 270 K/W 40 20 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21321 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21322 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL Forward voltage PARAMETER IF = 100 mA, tp ≤ 20 ms VF Reverse voltage IR = 10 μA VR Temperature coefficient of VF MIN. TYP. MAX. 1.3 1.7 UNIT V 6 V IF = 100 mA TKVF - 1.3 VR = 0 V, f = 1 MHz, E = 0 Cj 30 Radiant intensity IF = 100 mA, tp ≤ 20 ms Ie Radiant power IF = 50 mA, tp ≤ 20 ms φe 10 mW IF = 50 mA TKφe - 0.8 %/K ϕ ± 30 deg Peak wavelength IF = 50 mA λp 950 nm Spectral bandwidth IF = 50 mA Δλ 50 nm IF = 100 mA tr 800 ns IF = 1 A, tp/T = 0.01, tp ≤ 10 μs tr 450 ns Junction capacitance Temperature coefficient of φe Angle of half sensitivity Rise time 2 4.5 mV/K pF 7 mW/sr BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 4 1.5 V F - Forward Voltage (V) I F - Forward Current (mA) 1.4 10 3 10 2 10 1 10 0 10 -1 0 94 7996 1 2 3 Fig. 3 - Pulse Forward Current vs. Forward Voltage Rev. 2.4, 03-Sep-13 1.3 1.2 1.1 1.0 0.9 0.8 -45 -30 -15 4 V F - Forward Voltage (V) I F = 10 mA 14347 0 15 30 45 60 75 90 Tamb - Ambient Temperature (°C) Fig. 4 - Forward Voltage vs. Ambient Temperature Document Number: 83780 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSKS5400 www.vishay.com Vishay Semiconductors 1.25 Φe rel - Relative Radiant Power Ie - Radiant Intensity (mw/sr) 100 10 1 t p /T = 0.001 t p = 100 µs 0.1 0.01 10 0 10 1 10 2 10 3 0.75 0.5 0.25 IF = 100 mA 0 900 10 4 I F - Forward Current (mA) 94 7913 1.0 Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength I e rel - Relative Radiant Intensity 0° Φ e - Radiant Power (mW) 100 10 1 1000 950 λ - Wavelength (nm) 94 7994 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.1 1 13718 10 100 1000 I F - Forward Current (mA) Fig. 6 - Radiant Power vs. Forward Current 0.6 0.4 0.2 0 0.2 0.4 0.6 14349 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 1.6 I F = 10 mA 1.4 I e rel; Φe rel 1.2 1.0 0.8 0.6 0.4 0.2 0.0 - 45 - 30 - 15 14348 0 15 30 45 60 75 90 Tamb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature Rev. 2.4, 03-Sep-13 Document Number: 83780 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSKS5400 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 14345 Rev. 2.4, 03-Sep-13 Document Number: 83780 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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