TSKS5400 Datasheet

TSKS5400
www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
FEATURES
• Package type: leaded
• Package form: side view lens
• Dimensions (L x W x H in mm): 5 x 2.65 x 5
• Peak wavelength: λp = 950 nm
• High reliability
• High radiant power
14354-1
• High radiant intensity
• Angle of half intensity: ϕ = ± 30°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
DESCRIPTION
• Package matched with detector TEKS5400
The TSKS5400-FSZ is an infrared, 950 nm emitting diode in
GaAs technology with high radiant power, molded in a clear
plastic package.
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Photointerrupters
• Transmissive sensors, gap sensors
• Reflective sensors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
TSKS5400-FSZ
4.5
± 30
950
800
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSKS5400-FSZ
PACKAGING
REMARKS
PACKAGE FORM
Tape and ammopack
MOQ: 2000 pcs, 2000 pcs/ammopack
Side view lens
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
Reverse voltage
PARAMETER
VR
6
V
Forward current
IF
100
mA
Surge forward current
TEST CONDITION
tp ≤ 100 μs
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 2.4, 03-Sep-13
UNIT
IFSM
2
A
PV
170
mW
Tj
100
°C
Tamb
- 25 to + 85
°C
°C
Tstg
- 40 to + 100
t ≤ 5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
270
K/W
Document Number: 83780
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSKS5400
www.vishay.com
Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 270 K/W
80
60
40
100
80
60
RthJA = 270 K/W
40
20
20
0
0
0
10
20 30
40
50
60
70 80
90
100
0
Tamb - Ambient Temperature (°C)
21321
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21322
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
Forward voltage
PARAMETER
IF = 100 mA, tp ≤ 20 ms
VF
Reverse voltage
IR = 10 μA
VR
Temperature coefficient of VF
MIN.
TYP.
MAX.
1.3
1.7
UNIT
V
6
V
IF = 100 mA
TKVF
- 1.3
VR = 0 V, f = 1 MHz, E = 0
Cj
30
Radiant intensity
IF = 100 mA, tp ≤ 20 ms
Ie
Radiant power
IF = 50 mA, tp ≤ 20 ms
φe
10
mW
IF = 50 mA
TKφe
- 0.8
%/K
ϕ
± 30
deg
Peak wavelength
IF = 50 mA
λp
950
nm
Spectral bandwidth
IF = 50 mA
Δλ
50
nm
IF = 100 mA
tr
800
ns
IF = 1 A, tp/T = 0.01, tp ≤ 10 μs
tr
450
ns
Junction capacitance
Temperature coefficient of φe
Angle of half sensitivity
Rise time
2
4.5
mV/K
pF
7
mW/sr
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 4
1.5
V F - Forward Voltage (V)
I F - Forward Current (mA)
1.4
10 3
10 2
10 1
10 0
10 -1
0
94 7996
1
2
3
Fig. 3 - Pulse Forward Current vs. Forward Voltage
Rev. 2.4, 03-Sep-13
1.3
1.2
1.1
1.0
0.9
0.8
-45 -30 -15
4
V F - Forward Voltage (V)
I F = 10 mA
14347
0
15
30 45 60 75 90
Tamb - Ambient Temperature (°C)
Fig. 4 - Forward Voltage vs. Ambient Temperature
Document Number: 83780
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSKS5400
www.vishay.com
Vishay Semiconductors
1.25
Φe rel - Relative Radiant Power
Ie - Radiant Intensity (mw/sr)
100
10
1
t p /T = 0.001
t p = 100 µs
0.1
0.01
10 0
10 1
10 2
10 3
0.75
0.5
0.25
IF = 100 mA
0
900
10 4
I F - Forward Current (mA)
94 7913
1.0
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Power vs. Wavelength
I e rel - Relative Radiant Intensity
0°
Φ e - Radiant Power (mW)
100
10
1
1000
950
λ - Wavelength (nm)
94 7994
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.1
1
13718
10
100
1000
I F - Forward Current (mA)
Fig. 6 - Radiant Power vs. Forward Current
0.6
0.4
0.2
0
0.2
0.4
0.6
14349
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
1.6
I F = 10 mA
1.4
I e rel; Φe
rel
1.2
1.0
0.8
0.6
0.4
0.2
0.0
- 45 - 30 - 15
14348
0
15 30 45 60 75 90
Tamb - Ambient Temperature (°C)
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Rev. 2.4, 03-Sep-13
Document Number: 83780
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSKS5400
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
14345
Rev. 2.4, 03-Sep-13
Document Number: 83780
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000