2578

NTE2578
Silicon NPN Transistor
TV Horizontal Deflection Output
TO−220 Full Pack
Features:
D Excellent Fall Time Permitting Efficient Drive with Less Internal Dissipation
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 40V, IE = 0
−
−
0.1
mA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
−
−
0.1
mA
DC Current Gain
hFE
VCE = 5V, IC = 1A
30
−
60
VCE = 5V, IC = 4A
25
−
−
VCE = 5V, IC = 1A
−
10
−
MHz
Gain Bandwidth Product
fT
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 4A, IB = 400mA
−
0.5
1.0
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 4A, IB = 400mA
−
−
1.5
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 5mA, IE = 0
200
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 5mA, RBE = 
60
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IC = 5mA, IC = 0
6
−
−
V
−
0.2
0.5
s
Fall Time
tf
VCC = 50V, VBB = 5V,
IC = 5A, IB1 = −IB2 = 500mA,
PW = 20s, Duty Cycle 
2.5%
Rev. 6−15
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.122 (3.1)
Dia
.114 (2.9) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated