2640

NTE2640
Silicon NPN Transistor
Color TV Horizontal Deflection Output
TO−220 Full Pack
Features:
D High Speed
D High Collector−Emitter Breakdown Voltage
D High Reliability
D On−Chip Damper Diode
Absolute Maximum Ratings: (TA + 25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Dissipation, PC
TA + 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC + 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Electrical Characteristics: (TA + 25C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Collector−Emitter Sustaining Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
ICBO
VCE = 800V, IE = 0
−
−
10
A
ICES
VCE = 1500V, RBE = 0
−
−
1.0
mA
IEBO
VEB = 4V, IC = 0
40
−
−
mA
800
−
−
V
VCEO(sus) IC = 100mA, IB = 0
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 3.15A, IB = 630mA
−
−
3.0
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 3.15A, IB = 630mA
−
−
1.5
V
hFE
VCE = 5V, IC = 500mA
10
−
−
VCE = 5V, IC = 3.5A
5
−
8
IEC = 6A
−
−
2
V
VCC = 200V, VBE = −2V, IC = 2A,
IB1 = 400mA, IB2 = 800mA,
Pulse Width = 20s, Duty Cycle  1%
−
−
0.3
s
DC Current Gain
Diode Forward Voltage
Fall Time
VF
tf
Rev. 6−15
.177 (4.5)
.394 (10.0)
.138
(3.5)
.110 (2.8)
Isol
.283
(7.2)
.630
(16.0)
.634
(16.1)
B
C
E
.142
(3.6)
.024
(0.6)
.551
(14.0)
.100 (2.54)