2339

NTE2339
Silicon NPN Transistor
High Voltage, High Speed Switch
TO−220 Full Pack
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide Safe Operating Area
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Note 1. Pulse Width  300s, Duty Cycle  10%.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 800V, IE = 0
−
−
10
A
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
−
−
10
A
hFE (1)
VCE = 5V, IC = 200mA
20
−
40
hFE (2)
VCE = 5V, IC = 1A
8
−
−
fT
VCE = 10V, IC 200mA
−
15
−
MHz
Cob
VCB = 10V, f = 1MHz
−
60
−
pF
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector−Emitter Saturation Voltage
VCE(sat) IC = 1.5A, IB = 300mA
−
−
2.0
V
Base−Emitter Saturation Voltage
VBE(sat)
−
−
1.5
V
IC = 1.5A, IB = 300mA
Rev. 5−16
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Collector−Base Breakdown Voltage
Test Conditions
V(BR)CBO IC = 1mA, IE = 0
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = 
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
Collector−Emitter Sustaining Voltage VCEX(sus) IC = 1.5A, IB1 = IB2 = 300mA,
L = 2mH, Clamped
Turn−On Time
ton
Storage Time
tstg
Fall Time
VCC = 400V, IB1 = −2.5A,
IB2 =IC = 2A, RL = 200
tf
.402 (10.2) Max
Min
Typ
Max
Unit
1100
−
−
V
800
−
−
V
7
−
−
V
800
−
−
V
−
−
0.5
s
−
−
3.0
s
−
−
0.3
s
.173 (4.4) Max
.224 (5.7) Max
.122 (3.1)
Dia
.114 (2.9) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE: TO−220 Full Pack