UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION medium power amplifier applications strobo flash applications FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA) ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SC5765L-T9S-K 2SC5765G-T9S-K TO-92SP Note: Pin Assignment: E: Emitter C: Collector B: Base Pin Assignment 1 2 3 E C B Packing Bulk MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R216-002.D 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING ( TA=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATINGS UNIT 15 V 10 V 7 V DC 5 A Collector Current IC Plused 9 A Collector Power Dissipation (Note 2) PC 550 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. When a device is mounted on a glass epoxy board (35 mm×30 mm×1mm) SYMBOL VCBO VCEO VEBO ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage (Note) Collector Output Capacitance Note: Pulse test SYMBOL BVCEO ICBO IEBO hFE 1 hFE2 hFE3 VCE(SAT) Cob UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IC=1mA, IB= 0 VCB=15V, IE= 0 VEB= 5V, IC=0 VCE=1.5V, IC=0.5A VCE=1.5V, IC=2A VCE=1.5V, IC=5A IC=3A, IB=60mA VCB=10V, IE= 0, f=1MHz MIN TYP MAX UNIT 10 V 0.1 μA 0.1 μA 450 700 320 170 0.27 V 25 pF 2 of 4 QW-R216-002.D 2SC5765 Collector Current, IC (A) DC Current Gain, hFE Collector Current, IC (A) Collector Emitter Saturation Voltage, VCE(sat) (V) TYPICAL CHARACTERISTICS Safe Operating Area 100 Ic max(Pulsed) DC Operation s* 0m 1 1ms* 10 Ic max (Continous) 0.1 *Single nonrepetitive pulse TA= 25°C Curves must be derated linearly with increase in temperature 0.01 0.01 VCEO max 100 0.1 1 10 Collector Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector Power Dissipation, Pc (mW) 10 Collector Power Dissipation vs. Ambient Temperature 600 when a device is mounted on a Glass epoxy board (35mm*30mm*1mm) t= Collector Current, IC (A) NPN EPITAXIAL SILICON TRANSISTOR 400 200 0 0 150 100 Ambient Temperature, TA (°C) 50 3 of 4 QW-R216-002.D 2SC5765 TYPICAL CHARACTERISTICS Transient thermal impedance, rth (°C/W) NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R216-002.D