SEMICONDUCTOR KTA1242D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A FEATURES I C J D hFE=100 320 (VCE=-2V, IC=-0.5A). O K E Q : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). M B Low Collector Saturation Voltage. H MAXIMUM RATING (Ta=25 P F ) 1 SYMBOL RATING UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltag VEBO -8 V Collector Current IC -5 A Base Current IB -0.5 A Collector Power Dissipation PC 1.0 W Junction Temperature Tj 150 Tstg -55 150 3 MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 0.2 1.10 + _ 0.2 2.70 + _ 0.1 2.30 + 1.00 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 2.00 + 0.20 _ 0.10 0.50 + _ 0.10 0.91+ _ 0.1 0.90 + _ 0.10 1.00 + 0.95 MAX 1. BASE 2. COLLECTOR 3. EMITTER DPAK I A C D J K Q Storage Temperature Range 2 B CHARACTERISTIC L F DIM A B C D E F H I J K L M O P Q P H E G F 1 F 2 L 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 1.10 + 0.2 _ 0.6 9.50 + _ 0.1 2.30 + _ 0.1 0.76 + 1.0 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 2.0 + 0.2 _ 0.1 0.50 + _ 0.1 1.0 + 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC IPAK ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-8V, IC=0 - - -100 nA Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -20 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -8 - - V VCE=-2V, IC=-0.5A 100 - 320 hFE(2) VCE=-2V, IC=-4A 70 - - VCE(sat) IC=-3A, IB=-75mA - - -0.5 V Base-Emitter Voltage VBE VCE=-2V, IC=-4A - - -1.5 V Transition Frequency fT VCE=-2V, IC=-0.5A - 170 - MHz VCB=-10V, IE=0, f=1MHz - 62 - pF hFE(1) (Note) DC Current Gain Collector-Emitter Saturation Voltage Collector Output Capacitance Cob Note : hFE(1) Classification O:100~200, Y:160~320 2003. 3. 27 Revision No : 4 1/2 KTA1242D/L I C - VCE Tc=25 C -70mA -50mA -4 -30mA -20mA I B =-10mA -2 0 -2 -4 -6 -8 -4 COMMON EMITTER V CE =-2V 0 -0.4 -0.8 h FE - I C Tc=-25 C 100 50 COMMON EMITTER VCE =-2V COLLECTOR POWER DISSIPATION P C (W) 10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -3 COMMON EMITTER I C /I B =40 -1 -0.5 -0.3 C 00 =1 Tc -0.1 Tc=25 C Tc=-25 C -0.05 -0.03 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) Pc - Ta SAFE OPERATING AREA -10 -20 1.6 1.4 1.2 1.0 0.8 Ta =2 0.6 5 C 0.4 0.2 0 -2.0 COLLECTOR CURRENT I C (A) 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE Ta ( C) 2003. 3. 27 COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) Tc=25 C COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE Tc=100 C 30 -1.6 VCE(sat) - I C 1k 300 -1.2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 500 Tc=25 C -2 0 -10 Tc=-25 C Revision No : 4 160 -10 -5 -3 -1 -0.5 -0.3 I C MAX.(PULSED) I C MAX. (CONTINUOUS) ** 10 m S* 100mS* D O C Tc PER =2 AT 5 C ION * SINGLE PULSE Tc=25 C ** PULSE WIDTH=10ms(MAX) DUTY CYCLE=30%(MAX) CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.1 -0.3 -0.5 -1 -3 -5 VCEO MAX. 0 -6 C -100mA -6 -8 100 COMMON EMITTER Tc= -150mA COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) -8 I C - VBE -10 -30 -50 COLLECTOR-EMITTER VOLTAGE VCE (V) 2/2